DC Field | Value | Language |
---|---|---|
dc.contributor.author | Oh, JH | ko |
dc.contributor.author | Chang, Kee-Joo | ko |
dc.contributor.author | Ihm, G | ko |
dc.date.accessioned | 2013-02-28T06:32:07Z | - |
dc.date.available | 2013-02-28T06:32:07Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1996-03 | - |
dc.identifier.citation | JOURNAL OF PHYSICS-CONDENSED MATTER, v.8, no.11, pp.1705 - 1712 | - |
dc.identifier.issn | 0953-8984 | - |
dc.identifier.uri | http://hdl.handle.net/10203/73266 | - |
dc.description.abstract | We investigate the electronic structure of In1-xGaxAs/GaAs strained quantum wells and the effects of S-doping on the density of states, effective mass, and transition energies via an exact treatment of the Pikus-Bir Hamiltonian. As the carrier density of the delta-doped layer increases, both the conduction and valence subbands exhibit decreasing behaviour, while the density of states and the effective masses are little affected by delta-doping. In this case, since the valence subbands decrease more rapidly with doping concentration, the energies of the transitions from the first valence subband to the conduction states are found to increase. | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | BAND OFFSET | - |
dc.title | Electronic structure of In1-xGaxAs/GaAs strained quantum wells with a delta-doped layer | - |
dc.type | Article | - |
dc.identifier.wosid | A1996UB92100014 | - |
dc.identifier.scopusid | 2-s2.0-0348093413 | - |
dc.type.rims | ART | - |
dc.citation.volume | 8 | - |
dc.citation.issue | 11 | - |
dc.citation.beginningpage | 1705 | - |
dc.citation.endingpage | 1712 | - |
dc.citation.publicationname | JOURNAL OF PHYSICS-CONDENSED MATTER | - |
dc.contributor.localauthor | Chang, Kee-Joo | - |
dc.contributor.nonIdAuthor | Oh, JH | - |
dc.contributor.nonIdAuthor | Ihm, G | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | BAND OFFSET | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.