The influence of interfacial defects on fast charge trapping in nanocrystalline oxide-semiconductor thin film transistors

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Defects in oxide semiconductors not only influence the initial device performance but also affect device reliability. The front channel is the major carrier transport region during the transistor turn-on stage, therefore an understanding of defects located in the vicinity of the interface is very important. In this study, we investigated the dynamics of charge transport in a nanocrystalline hafnium-indium-zinc-oxide thin-film transistor (TFT) by short pulse I-V, transient current and 1/f noise measurement methods. We found that the fast charging behavior of the tested device stems from defects located in both the front channel and the interface, following a multi-trapping mechanism. We found that a silicon-nitride stacked hafnium-indium-zinc-oxide TFT is vulnerable to interfacial charge trapping compared with silicon-oxide counterpart, causing significant mobility degradation and threshold voltage instability. The 1/f noise measurement data indicate that the carrier transport in a silicon-nitride stacked TFT device is governed by trapping/de-trapping processes via defects in the interface, while the silicon-oxide device follows the mobility fluctuation model.
Publisher
IOP PUBLISHING LTD
Issue Date
2016-05
Language
English
Article Type
Article
Keywords

D-V-G; GATE DIELECTRICS; G METHODOLOGY; PERFORMANCE; TECHNOLOGY; MOBILITY; HYDROGEN; NOISE; DISPLAYS; VOLTAGE

Citation

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.31, no.5

ISSN
0268-1242
DOI
10.1088/0268-1242/31/5/055014
URI
http://hdl.handle.net/10203/240763
Appears in Collection
EE-Journal Papers(저널논문)
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