DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Taeho | ko |
dc.contributor.author | Hur, Jihyun | ko |
dc.contributor.author | Jeon, Sanghun | ko |
dc.date.accessioned | 2018-03-21T02:53:04Z | - |
dc.date.available | 2018-03-21T02:53:04Z | - |
dc.date.created | 2018-03-07 | - |
dc.date.created | 2018-03-07 | - |
dc.date.issued | 2016-05 | - |
dc.identifier.citation | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.31, no.5 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.uri | http://hdl.handle.net/10203/240763 | - |
dc.description.abstract | Defects in oxide semiconductors not only influence the initial device performance but also affect device reliability. The front channel is the major carrier transport region during the transistor turn-on stage, therefore an understanding of defects located in the vicinity of the interface is very important. In this study, we investigated the dynamics of charge transport in a nanocrystalline hafnium-indium-zinc-oxide thin-film transistor (TFT) by short pulse I-V, transient current and 1/f noise measurement methods. We found that the fast charging behavior of the tested device stems from defects located in both the front channel and the interface, following a multi-trapping mechanism. We found that a silicon-nitride stacked hafnium-indium-zinc-oxide TFT is vulnerable to interfacial charge trapping compared with silicon-oxide counterpart, causing significant mobility degradation and threshold voltage instability. The 1/f noise measurement data indicate that the carrier transport in a silicon-nitride stacked TFT device is governed by trapping/de-trapping processes via defects in the interface, while the silicon-oxide device follows the mobility fluctuation model. | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | D-V-G | - |
dc.subject | GATE DIELECTRICS | - |
dc.subject | G METHODOLOGY | - |
dc.subject | PERFORMANCE | - |
dc.subject | TECHNOLOGY | - |
dc.subject | MOBILITY | - |
dc.subject | HYDROGEN | - |
dc.subject | NOISE | - |
dc.subject | DISPLAYS | - |
dc.subject | VOLTAGE | - |
dc.title | The influence of interfacial defects on fast charge trapping in nanocrystalline oxide-semiconductor thin film transistors | - |
dc.type | Article | - |
dc.identifier.wosid | 000375570500016 | - |
dc.identifier.scopusid | 2-s2.0-84963851459 | - |
dc.type.rims | ART | - |
dc.citation.volume | 31 | - |
dc.citation.issue | 5 | - |
dc.citation.publicationname | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.identifier.doi | 10.1088/0268-1242/31/5/055014 | - |
dc.contributor.localauthor | Jeon, Sanghun | - |
dc.contributor.nonIdAuthor | Kim, Taeho | - |
dc.contributor.nonIdAuthor | Hur, Jihyun | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | charge transport | - |
dc.subject.keywordAuthor | oxide semiconductor | - |
dc.subject.keywordAuthor | nanocrystal | - |
dc.subject.keywordAuthor | thin film transistor | - |
dc.subject.keywordPlus | D-V-G | - |
dc.subject.keywordPlus | GATE DIELECTRICS | - |
dc.subject.keywordPlus | G METHODOLOGY | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | TECHNOLOGY | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | HYDROGEN | - |
dc.subject.keywordPlus | NOISE | - |
dc.subject.keywordPlus | DISPLAYS | - |
dc.subject.keywordPlus | VOLTAGE | - |
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