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Jeon, Sanghun (전상훈)
부교수, School of Electrical Engineering(전기및전자공학부)
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    NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) Altmetrics
    1
    Article
    Influence of High-Pressure Annealing on Memory Properties of Hf0.5Zr0.5O2 Based 1T-FeRAM

    Yoon, Jae Seok; Tewari, Amit; Shin, Changhwan; et al, IEEE ELECTRON DEVICE LETTERS, v.40, no.7, pp.1076 - 1079, 2019-07

    2
    Article
    Robust and scalable three-dimensional spacer textile pressure sensor for human motion detection

    Kim, Kyungkwan; Jung, Minhyun; Jeon, Sanghunresearcher; et al, SMART MATERIALS AND STRUCTURES, v.28, no.6, 2019-06

    3
    Article
    Scalable and facile synthesis of stretchable thermoelectric fabric for wearable self-powered temperature sensors

    Jung, Minhyun; Jeon, Sanghunresearcher; Bae, Jihyun, RSC ADVANCES, v.8, no.70, pp.39992 - 39999, 2018-12

    4
    Article
    Effect of dysprosium and lutetium metal buffer layers on the resistive switching characteristics of Cu-Sn alloy-based conductive-bridge random access memory

    Vishwanath, Sujaya Kumar; Woo, Hyunsuk; Jeon, Sanghunresearcher, NANOTECHNOLOGY, v.29, no.38, 2018-09

    5
    Article
    First-order reversal curve diagrams for characterizing ferroelectricity of Hf0.5Zr0.5O2 films grown at different rates

    Goh, Youngin; Jeon, Sanghunresearcher, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.36, no.5, 2018-09

    6
    Article
    Discharge Current Analysis Estimating the Defect Sites in Amorphous Hafnia Thin-Film Transistor

    Goh, Youngin; Jeon, Sanghunresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.8, pp.3264 - 3268, 2018-08

    7
    Article
    The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO2

    Goh, Youngin; Jeon, Sanghunresearcher, NANOTECHNOLOGY, v.29, no.33, 2018-08

    8
    Article
    Enhanced tunneling electroresistance effects in HfZrO-based ferroelectric tunnel junctions by high-pressure nitrogen annealing

    Goh, Youngin; Jeon, Sanghunresearcher, APPLIED PHYSICS LETTERS, v.113, no.5, 2018-07

    9
    Article
    Resistive switching characteristics of a modified active electrode and Ti buffer layer in Cu-Se-based atomic switch

    Woo, Hyunsuk; Vishwanath, Sujaya Kumar; Jeon, Sanghunresearcher, JOURNAL OF ALLOYS AND COMPOUNDS, v.753, pp.551 - 557, 2018-07

    10
    Article
    Enhancement of resistive switching properties in Al2O3 bilayer-based atomic switches: multilevel resistive switching

    Vishwanath, Sujaya Kumar; Woo, Hyunsuk; Jeon, Sanghunresearcher, NANOTECHNOLOGY, v.29, no.23, 2018-06

    11
    Article
    Non-volatile resistive switching in CuBi-based conductive bridge random access memory device

    Vishwanath, Sujaya Kumar; Woo, Hyunsuk; Jeon, Sanghunresearcher, APPLIED PHYSICS LETTERS, v.112, no.25, 2018-06

    12
    Article
    Pulse Switching Study on the HfZrO Ferroelectric Films With High Pressure Annealing

    Kim, Taeho; Jeon, Sanghunresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.5, pp.1771 - 1773, 2018-05

    13
    Article
    Quantitative analysis of charge trapping and classification of sub-gap states in MoS2 TFT by pulse I-V method

    Park, Junghak; Hur, Ji-Hyun; Jeon, Sanghunresearcher, NANOTECHNOLOGY, v.29, no.17, 2018-04

    14
    Article
    Excellent Resistive Switching Performance of Cu-Se-Based Atomic Switch Using Lanthanide Metal Nanolayer at the Cu-Se/Al2O3 Interface

    Woo, Hyunsuk; Vishwanath, Sujaya Kumar; Jeon, Sanghunresearcher, ACS APPLIED MATERIALS & INTERFACES, v.10, no.9, pp.8124 - 8131, 2018-03

    15
    Article
    Effects of high pressure nitrogen annealing on ferroelectric Hf0.5Zr0.5O2 films

    Kim, Taeho; Park, Jinsung; Cheong, Byoung-Ho; et al, APPLIED PHYSICS LETTERS, v.112, no.9, 2018-03

    16
    Article
    Efficient Suppression of Defects and Charge Trapping in High Density In-Sn-Zn-O Thin Film Transistor Prepared using Microwave-Assisted Sputter

    Goh, Youngin; Ahn, Jaehan; Lee, Jeong Rak; et al, ACS APPLIED MATERIALS & INTERFACES, v.9, no.42, pp.36962 - 36970, 2017-10

    17
    Article
    Fast and slow transient charging of Oxide Semiconductor Transistors

    Kim, Taeho; Park, Sungho; Jeon, Sanghunresearcher, SCIENTIFIC REPORTS, v.7, 2017-09

    18
    Article
    Impact of fast transient charging and ambient on mobility of WS2 field-effect transistor

    Park, Junghak; Woo, Hyunsuk; Jeon, Sanghunresearcher, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.35, no.5, 2017-09

    19
    Article
    Sub-60-mV / decade Negative Capacitance FinFET With Sub-10-nm Hafnium-Based Ferroelectric Capacitor

    Ko, Eunah; Lee, Hyunjae; Goh, Youngin; et al, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.5, no.5, pp.306 - 309, 2017-09

    20
    Article
    Poly-4-vinylphenol (PVP) and Poly(melamine-co-formaldehyde) (PMF)-Based Atomic Switching Device and Its Application to Logic Gate Circuits with Low Operating Voltage

    Kang, Dong-Ho; Choi, Woo-Young; Woo, Hyunsuk; et al, ACS APPLIED MATERIALS & INTERFACES, v.9, no.32, pp.27073 - 27082, 2017-08

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