Quantum Simulation Study on Performance Optimization of GaSb/InAs nanowire Tunneling FET

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We report the computer aided design results for a GaSb/InAs broken-gap gate all around nanowire tunneling FET (TFET). In designing, the semi-empirical tight-binding (TB) method using sp3d5s* is used as band structure model to produce the bulk properties. The calculated band structure is cooperated with open boundary conditions (OBCs) and a three-dimensional Schrodinger-Poisson solver to execute quantum transport simulators. We find an device configuration for the operation voltage of 0.3 V which exhibit desired low sub-threshold swing (< 60 mV/dec) by adopting receded gate configuration while maintaining the high current characteristic (I-ON > 100 mu A/mu m) that broken-gap TFETs normally have.
Publisher
IEEK PUBLICATION CENTER
Issue Date
2016-10
Language
English
Article Type
Article
Keywords

FIELD-EFFECT TRANSISTORS

Citation

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.16, no.5, pp.630 - 634

ISSN
1598-1657
DOI
10.5573/JSTS.2016.16.5.630
URI
http://hdl.handle.net/10203/240756
Appears in Collection
EE-Journal Papers(저널논문)
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