Quantum Simulation Study on Performance Optimization of GaSb/InAs nanowire Tunneling FET

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dc.contributor.authorHur, Ji-Hyunko
dc.contributor.authorJeon, Sanghunko
dc.date.accessioned2018-03-21T02:52:54Z-
dc.date.available2018-03-21T02:52:54Z-
dc.date.created2018-03-07-
dc.date.created2018-03-07-
dc.date.issued2016-10-
dc.identifier.citationJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.16, no.5, pp.630 - 634-
dc.identifier.issn1598-1657-
dc.identifier.urihttp://hdl.handle.net/10203/240756-
dc.description.abstractWe report the computer aided design results for a GaSb/InAs broken-gap gate all around nanowire tunneling FET (TFET). In designing, the semi-empirical tight-binding (TB) method using sp3d5s* is used as band structure model to produce the bulk properties. The calculated band structure is cooperated with open boundary conditions (OBCs) and a three-dimensional Schrodinger-Poisson solver to execute quantum transport simulators. We find an device configuration for the operation voltage of 0.3 V which exhibit desired low sub-threshold swing (< 60 mV/dec) by adopting receded gate configuration while maintaining the high current characteristic (I-ON > 100 mu A/mu m) that broken-gap TFETs normally have.-
dc.languageEnglish-
dc.publisherIEEK PUBLICATION CENTER-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.titleQuantum Simulation Study on Performance Optimization of GaSb/InAs nanowire Tunneling FET-
dc.typeArticle-
dc.identifier.wosid000393191000012-
dc.identifier.scopusid2-s2.0-84994259891-
dc.type.rimsART-
dc.citation.volume16-
dc.citation.issue5-
dc.citation.beginningpage630-
dc.citation.endingpage634-
dc.citation.publicationnameJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE-
dc.identifier.doi10.5573/JSTS.2016.16.5.630-
dc.contributor.localauthorJeon, Sanghun-
dc.contributor.nonIdAuthorHur, Ji-Hyun-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorTunneling field effect transistor-
dc.subject.keywordAuthorGaSb-
dc.subject.keywordAuthorInAs-
dc.subject.keywordAuthornanowire-
dc.subject.keywordAuthorquantum transport-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
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