Showing results 1 to 9 of 9
Behavior of elemental tellurium as surface generation-recombination centers in CdTe/HgCdTe interface Lee, MY; Lee, YS; Lee, Hee Chul, APPLIED PHYSICS LETTERS, v.88, pp.103 - 109, 2006-05 |
Effect of boron ion implantation on the structural and optical properties of polycrystalline Cd0.96Zn0.04Te thin films Sridharan, M; Narayandass, SK; Mangalaraj, D; Lee, Hee-Chul, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, v.201, no.3, pp.465 - 474, 2003-03 |
Effect of substrate temperature on polycrystalline Cd0.9Zn0.1Te thin films studied by Raman scattering spectroscopy Sridharan, M; Mekaladevi, M; Narayandass, SK; Mangalaraj, D; Lee, Hee Chul, CRYSTAL RESEARCH AND TECHNOLOGY, v.39, pp.328 - 332, 2004-04 |
Optical and opto-electronic properties of polycrystalline Cd0.96Zn0.04Te thin films Sridharan, M; Narayandass, SK; Mangalaraj, D; Lee, Hee Chul, CRYSTAL RESEARCH AND TECHNOLOGY, v.38, no.6, pp.479 - 487, 2003 |
Raman scattering studies on B+ implanted Cd0.96Zn0.04Te thin films Sridharan, M; Narayandass, SK; Mangalaraj, D; Lee, Hee Chul, VACUUM, v.68, no.2, pp.119 - 122, 2002-10 |
Raman scattering studies on polycrystalline Cd0.9Zn0.1Te thin films Sridharan, MG; Mekaladevi, M; Narayandass, SK; Mangalaraj, D; Lee, Hee Chul, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, v.7, pp.1479 - 1482, 2005-06 |
Raman scattering, photoluminescence and spectroscopic ellipsometry studies on polycrystalline Cd0.96Zn0.04Te thin films Sridharan, M; Narayandass, SK; Mangalaraj, D; Lee, Hee Chul, JOURNAL OF ALLOYS AND COMPOUNDS, v.346, no.1-2, pp.100 - 106, 2002-11 |
Studies on polycrystalline Cd0.96Zn0.04Te thin films prepared by vacuum evaporation Sridharan, M; Narayandass, SK; Mangalaraj, D; Lee, Hee Chul, VACUUM, v.70, pp.511 - 522, 2003-04 |
X-ray diffraction and Raman scattering studies in B-10(+)-implanted Cd0.96Zn0.04Te thin films prepared by vacuum evaporation Sridharan, M; Narayandass, SK; Mangalaraj, D; Lee, Hee Chul, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v.14, pp.69 - 73, 2003-02 |
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