Raman scattering studies on polycrystalline Cd0.9Zn0.1Te thin films

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Polycrystalline Cd0.9Zn0.1Te thin films were prepared by vacuum evaporation onto well-cleaned glass substrates maintained at 300, 373 and 473 K. X-ray diffraction studies revealed that the films have zinc blende structure with preferential (111) orientation. Raman peak of the as-deposited film appeared at 140.30 cm(-1) and 159.65 cm(-1) were for the transverse optic (TO) and longitudinal optic (LO) phonons respectively. The XRD patterns of the higher substrate temperature deposited films exhibited an increase in the intensity of the (111) peak and decrease in the FWHM. The Raman peak position did not change appreciably, whereas the peak intensity increases and the FWHM decreases for the higher substrate temperature and the results are attributed to the improvement of crystallinity of the films on thermal treatment.
Publisher
NATL INST OPTOELECTRONICS
Issue Date
2005-06
Language
English
Article Type
Article
Keywords

CDZNTE; CDTE

Citation

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, v.7, pp.1479 - 1482

ISSN
1454-4164
URI
http://hdl.handle.net/10203/92674
Appears in Collection
EE-Journal Papers(저널논문)
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