Showing results 1 to 3 of 3
Atomic layer deposited high-kappa films and their role in metal-insulator-metal capacitors for Si RF/analog integrated circuit applications Zhu, CX; Cho, Byung Jin; Li, MF, CHEMICAL VAPOR DEPOSITION, v.12, no.2-3, pp.165 - 171, 2006-03 |
High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectrics Ding, SJ; Hu, H; Lim, HF; Kim, SJ; Yu, XF; Zhu, CX; Cho, Byung Jin; et al, IEEE ELECTRON DEVICE LETTERS, v.24, no.12, pp.730 - 732, 2003-12 |
RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications Ding, SJ; Hu, H; Zhu, CX; Kim, SJ; Yu, XF; Li, MF; Cho, Byung Jin; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.51, no.6, pp.886 - 894, 2004-06 |
Discover