Atomic layer deposited high-kappa films and their role in metal-insulator-metal capacitors for Si RF/analog integrated circuit applications

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In this paper, we present an extensive evaluation of metal-insulator-metal (MIM) capacitors by comparing various high-K dielectric structures based on atomic layer deposited HfO2 and Al2O3 films at two thicknesses. The results indicate that laminate-structured MINI capacitors provide Superior performance to their sandwiched/stacked counterparts in both thin (similar to 13 nm) and thick (similar to 55 nm) dielectric films. Benefits include low leakage current, good polarity-independent electrical characteristics, high-breakdown electrical field (voltage), and long time-to-breakdown while maintaining comparable capacitance density and voltage coefficients of capacitance. It is noted, however, that the benefits of the laminate structure become less significant when the dielectric thickness decreases. The advantages of the laminate structure are mainly attributed to the alternate insertions of Al2O3 into bulk HfO2, thereby preventing crystallization of HfO2.
Publisher
WILEY-V C H VERLAG GMBH
Issue Date
2006-03
Language
English
Article Type
Article
Keywords

MATCHING PROPERTIES; MIM CAPACITORS; MOS CAPACITORS; DIELECTRICS; HFO2; RELIABILITY

Citation

CHEMICAL VAPOR DEPOSITION, v.12, no.2-3, pp.165 - 171

ISSN
0948-1907
DOI
10.1002/cvde.200506393
URI
http://hdl.handle.net/10203/92712
Appears in Collection
EE-Journal Papers(저널논문)
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