High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectrics

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For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO2-Al2O3 laminate dielectric' using atomic im layer deposition (ALD) technique. Our data indicates that the laminate NUM capacitor can provide high capacitance density of 12.8 fF/ mum(2) from 10 kHz up to 20 GHz, very low leakage current of 3.2 x 10(-8) A/cm(2) at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic. one of 1830 PPM/V-2, temperature coefficient of capacitance of 182 ppm/degreesC, and high breakdown field of similar to6 MV/cm as well as promising reliability. As a result, the HfO2-Al2O3 laminate is a very promising candidate for next generation MINI capacitor for radio frequency and mixed signal integrated circuit applications.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2003-12
Language
English
Article Type
Article
Citation

IEEE ELECTRON DEVICE LETTERS, v.24, no.12, pp.730 - 732

ISSN
0741-3106
DOI
10.1109/LED.2003.820664
URI
http://hdl.handle.net/10203/81858
Appears in Collection
EE-Journal Papers(저널논문)
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