RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications

Cited 58 time in webofscience Cited 0 time in scopus
  • Hit : 218
  • Download : 0
High-performance metal-insulator-metal capacitors using atomic layer-deposited HfO2-Al2O3 laminate are fabricated and characterized for RF and mixed-signal applications. The laminate capacitor can offer high capacitance density (12.8 fF/mum(2)) up to 20 GHz, low leakage current of 4.9 x 10(-8) A/cm(2) at 2 V and 125 degreesC, and small linear voltage coefficient of capacitance of 211 ppm/V at 1 MHz, which can easily satisfy RF capacitor requirements for year 2007 according to the International Technology Roadmap for Semiconductors. In addition, effects of constant voltage stress and temperature on leakage current and voltage linearity are comprehensively investigated, and dependences of quadratic voltage coefficient of capacitance (alpha) on frequency and thickness are also demonstrated. Meanwhile, the underlying mechanisms are also discussed.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2004-06
Language
English
Article Type
Article
Keywords

HFO2 DIELECTRICS; STRESS

Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.51, no.6, pp.886 - 894

ISSN
0018-9383
DOI
10.1109/TED.2004.827367
URI
http://hdl.handle.net/10203/85386
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 58 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0