Showing results 27 to 86 of 98
Design and Fabrication of a Novel Inner Field-plate AlGaN/GaN-HEMT Structure for High Power Applications Lee,; Lee, S; Yang, Kyounghoon, MINT-MIS, pp.205 - 208, 2007 |
Design and implementation of a Ka-band 4-bit MMIC phase shifter using an InP-based PIN diode Yang, JG; Kim, M; 양경훈, 감시정찰정보학술대회, pp.114 - 114, 2009 |
Design and Implementation of a Ku-band 5bit MMIC Phase Shifter using InGaAs PIN Diodes Yang, JG; 양경훈, Korean Conference on Semiconductors, pp.22 - 23, 2009 |
Design and simulation of 20 Gbps-level MOBILE based on an RTD-HEMT Technology Kim,T; 양경훈, Korean Conference On Semiconductors, pp.469 - 470, 2003 |
Design of a New Pinned Photodiode Structure for High Sensitivity CMOS Image Sensors Lee, S; 양경훈, Korean Conference On Semiconductors, pp.69 - 70, 2006 |
Design of multi-valued QMOS pre-decoder Zhang, H; Uemura, T.; Mazumder, P.; Yang, Kyounghoon, IEEE Conference on Nanotechnology, pp.614 - 617, IEEE, 2004 |
Design optimization of high-frequency InP-HBT power cells based on thermal simulation Song, Y; Kim, T; Yang, Kyounghoon, MINT Millimeter-wave International Symposium, pp.75 - 81, 2001-02-15 |
Development of Self-Aligned RTDs using a SiNx Sidewall Process Lee, H; Lee, J; 양경훈, Korean Conference on Semiconductors, pp.564 - 565, 2010 |
Double Heterojunction Bipolar Transistors with Chirped InGaAs/InP Superlattice Base-Collector Junction Grown by CBE Yang, Kyounghoon; Muuns, G. O.; Wang, X.; Haddad, G. I., IEEE Int. Conf. on InP and Related Materials, pp.645 - 648, IEEE, 1997-05-11 |
Dynamic Range Enhancement of a Self-adaptive APS with Pulsed Photogate Bias Cho, C; Lee, J; Baek, I; 양경훈, Korean Conference on Semiconductors, pp.606 - 607, Korean Conference on Semiconductors, 2010 |
Enhanced breakdown characteristics of AlGaN/GaN HEMTs using a gate/drain field-plate structure Kim, S; Yang, Kyounghoon, International Conference on Solid State Devices and Materials, pp.208 - 209, 2005 |
Enhanced breakdown characteristics of AlGaN/GaN HEMTs using a gate/drain field-plate structure Kim,; 양경훈, Korean Conference on Semiconductors, pp.447 - 448, 2006 |
Experimental investigation on temperature dependence of InP RTD-based Digital/Analog MMICs Lee, J; Choi, S; Yang, Kyounghoon, 2009 International Nanotech Symposiym & Exhibition in Korea, 2009 |
Fabrication and characterization of AlAs/InGaAs/InAs Resonant Tunneling Diodes 홍성철; 김형태; 최성순; 김석진; 송생섭; 양경훈; 서광석, Korean Conference On Semiconductors, pp.341 - 342, 2003-02-27 |
Fabrication and characterization of RTD-HBT inverter Lin, C. H.; Yang, Kyounghoon; Gonzalez, A. F.; East, J. R.; Mazumder, P.; Haddad, G. I.; Chow, D.H.; et al, 17th IEEE Cornell Conference, pp.42 - 43, IEEE, 2000-08-07 |
Fabrication of Edge-Illuminated Refracting Facet Photodiodes with on-chip V-grooves Lee, B; Yoon, M; 양경훈, Korean Conference On Semiconductors, pp.51 - 52, 2003 |
Fabrication of GaAs-based Heterosturcture-MOS RF Switch Devices Using an LPCEO Technology Kim, S; 양경훈, Korean Conference on Semiconductors, pp.469 - 470, 2006 |
Fabrication of High fmax InP DHBTs Using a New Wet Etching Method Jeong, Y; Song, Y; Choi, S; Yoon, M; 양경훈, Korean Conference On Semiconductors, pp.347 - 348, 2003 |
Fabrication of Near Infrared Planar Geiger-mode Avalanche Photodiodes using a Single Diffusion Process 이기원; 양경훈, 19th 한국 반도체 학술대회, 한국 반도체 학술대회, 2012-02 |
Fabrication of sub-micron Y-gate InP MESFETs using crystallographically defined contact technology Yoon, M; Yang, Kyounghoon, Int. Conf. on Solid State Devices and Materials, pp.134 - 135, 2002 |
FPN Reduction in a Self-adaptive CMOS Image Sensor Using a Hard-reset Mode Choi, J; Lee, J; Baek, I; Yang, Kyounghoon, Korean Conference on Semiconductors, Korean Conference on Semiconductors, 2011 |
GaAs 산화막 형성 기술을 이용한 새로운 GaAs MMIC MOS Varactor 김성연; 양경훈, 한국군사과학기술학회 2004년 종합학술대회 및 정기총회, pp.517 - 519, 한국군사과학기술학회, 2004 |
HBT 및 IC 설계 및 제작기술 양경훈, 무선통신용MMIC및 Module Workshop, pp.167 - 201, 1999 |
High performance mmW-band MMIC phase shifters using InP-based PIN diodes with a high-cutoff Kim, M; Yang, JG; 양경훈, 2009 Spring Conference on Microwave and Wave Propagation, pp.103 - 103, 2009 |
High-speed digital/analog ICs using a Monolithic quantum-effect heterojunction device technology Choi, S; Lee, B; Kim, T; 양경훈, Korean Conference on Semiconductors, pp.189 - 190, 2005 |
IC Application of Resonant Tunneling Diodes : RTD/HBT VCO Choi, S; Lee, B; Kim, T; Yang, Kyounghoon, International Symposium on Nanomanufacturing, pp.187 - 189, 2004 |
Implementation of a 4:1 multiplexing quantum-effect IC based on RTD circuit topology Lee J.; Choi S.; Yang, Kyounghoon, 2010 10th IEEE Conference on Nanotechnology, NANO 2010, pp.211 - 213, IEEE, 2010-08-17 |
Implementation of a new functional digital IC for multiplexing operation based on RTDs Choi, S.; Jeong, Y.; Lee, J.; Yang, Kyounghoon, 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO, pp.681 - 683, 2008-08-18 |
Improved DC and RF performance of high power AlGaN/GaN HEMTs with a novel inner field-plate Lee K.; Ko K.; Lee S.; Yang, Kyounghoon, 2006 Asia-Pacific Microwave Conference, APMC, pp.1019 - 1022, 2006-12-12 |
InP Double heterojunction bipolar transistors with chirped InGaAs/InP superlattice base-collector junction grown by CBE Yang, Kyounghoon; Munns, G. O.; East, J. R.; Haddad,G. I., IEEE Cornell Conf, pp.278 - 286, IEEE, 1997-08-04 |
InP HBT Technology based on new crystallographical etching characteristics 양경훈, ISRC Workshop, Compound Semiconductor Materials and Devices, pp.1 - 10, 2003 |
InP HBT technology for Micro/mm-Wave Applications 양경훈, 무선통신용MMIC및 Module Workshop 2000, pp.231 - 242, 2000 |
InP 기반 PIN MMIC 기술을 이용한 밀리미터파 대역레이더 시스템용 제어 회로 개발 Yang, JG; 양경훈, 군수용초고주파부품워크샵, pp.240 - 240, 2009 |
InP-BASE:D GILBERT CELL PHASE DETECTOR FOR GENERATION OF STABLE DENSE WAVELENGTH DIVISION MULTIPLEXING CHANNEL OFFSETS USING AN OPTICAL PHASE-LOCKED LOOP Goetz, P. G.; Eisele, H.; Syao, K. C.; Yang, Kyounghoon; Bhattacharya, P., IEEE MTT-S Int. Microwave Symposium, pp.1245 - 1248, IEEE, 1998-06-07 |
InP-based device & IC technology for high frequency microelectronics 양경훈; Kim, T.; Yoon, M.; Kim,M.; Song, Y.; Lee, B., 2000 Fall Conference, Korea Institute of Military Science & technology, pp.181 - 186, 2000 |
InP-Based High Speed Digital Logic Gates Using an RTD/HBT Heterostructure Lin, C. H.; Yang, Kyounghoon; Gonzalez, A. F.; East, J. R.; Mazumder, P.; Haddad, G. I., IEEE Int. Conf. on InP and Related Material, pp.419 - 422, IEEE, 1999-05-16 |
InP-based OEIC Photoreceivers using Shared Layer Integration Technology of Heterojunction Bipolar Transistors and Refracting-Facet Photodiodes Lee, B; Song,Y; Yang, Kyounghoon, Int. Conf. on Solid State Devices and Materials, pp.182 - 183, 2003-09-16 |
K/Ka/Q-band 4-bit Digital Attenuator using a T-type Resistive Network Yang, JG; 양경훈, Korean Conference on Semiconductors, pp.552 - 553, 2010 |
Ka-band 4-bit Digital MMIC Phase Shifter with Low-Insertion Loss Characteristics Yang, Kyounghoon, Global Symposium on Millimeter Waves, Global Symposium on Millimeter Waves, 2010 |
Ku-band Compact Multi-layer Monolithic Microwave Digital Attenuator using InP/InGaAs PIN Diodes Yang, Kyounghoon; Eom, H; Yang, JG; Choi, S, Int. Conf. on Solid State Devices and Materials, pp.304 - 305, 2007 |
Ku-band differential RTD/HBT VCO with ultra low DC-power Consumption Choi, S; Jeong, Y; 양경훈, Korean Conference on Semiconductors, pp.455 - 456, 2006 |
Ku-band Multi-layer 3-bit Digital Attenuator MMIC using InP/InGaAs PIN Diodes Eom, H; Yang, JG; Choi, S; 양경훈, Korean Conference on Semiconductors, pp.918 - 919, 2008 |
Large bandwidth InP-based monolithically integrated PIN-HBT photoreceivers for optical communications A. L. Gutierrez-Aitken; Bhattacharya, P.; Cowles, J.; Yang, Kyounghoon; Haddad, G. I., Conference on Manufacturing Process Development in Photonics, pp.197 - 203, 1994-11-01 |
Low-Power K-band Second Harmonic Balanced VCO IC Using InP Based RTDs Jeong,Y; Choi, S; Yang, Kyounghoon, IEEE International Conference on InP and Related Materials, pp.355 - 357, IEEE, 2010-05 |
Low-Power/High-Speed Digital/Analog ICs using an RTD-based MMIC Technology Yang, Kyounghoon, Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, pp.65 - 68, 2007 |
Monolithically Integrated InP-Based Minority Logic Gate Using an RTD/HBT Heterostructure Lin, C. H.; Yang, Kyounghoon; Bhattachrya, M.; Wang, X.; Zhang, X.; East, J. R.; Mazumder, P.; et al, IEEE Int. Conf. on InP and Related Materials, pp.419 - 422, IEEE, 1998-05-11 |
Monolithically integrated SiGe/Si PIN-HBT front-end transimpedance photoreceivers Rieh, J. S.; Qasaimeh, O.; Klotzkin, D.; Lu, L. H.; Yang, Kyounghoon; Katehi, L. P. B.; Bhattacharya, P.; et al, IEEE Cornell Conf, pp.322 - 331, IEEE, 1997-08-04 |
New High-Sensitivity Logarithmic Response CMOS Active Pixel Sensor using a GIDL Mechanism 백인규; 이지원; 양경훈, 19th 한국 반도체 학술대회, 한국 반도체 학술대회, 2012-02 |
Noise Analysis and Modeling of Microwave AlGaN/GaN HEMTs Considering Trap Effects Hwang, M; Yang, Kyounghoon, International Joint Conference of MINT-MIS 2005/TSMMW 2005, pp.136 - 139, 2005 |
Novel Differential-Mode RTD/HBT MOBILE-based D-Flip Flop IC Jeong,Y; Kim, T; Yang, Kyounghoon, International Conference on Solid State Devices and Materials, pp.222 - 223, 2005 |
Numerical study of the DC characteristics of InGaAs abrupt emitter HBT's using a self-consistent boundary condition approach Yang, Kyounghoon; East, J. R.; Haddad, G. I., Int. Semicond. Device Research Symp., pp.551 - 554, 1993-11-01 |
Observation of Thermal Reliability of BCB Passivated InAlAs/InGaAs HEMTs Yoon, M; Kim, T; Kim, D; Yang, Kyounghoon, Int. Conf. on Solid State Devices and Materials, pp.122 - 123, 2003-09-16 |
On the functional failure and switching time analysis of the MOBILE circuit Li, S. R.; Mazumder, P.; Yang, Kyounghoon, IEEE International Symposium on Circuits and Systems 2005, ISCAS 2005, pp.2531 - 2534, IEEE, 2005-05-23 |
Passivation Study for AlGaN/GaN HEMTs Using Photosensitive BCB and SiN Kim, S; Yang, Kyounghoon, International Joint Conference of MINT-MIS 2005/TSMMW 2005, pp.307 - 310, 2005 |
Performance modeling of resonant tunneling based RAMS Zhang, H.; Mazumder, P.; Ding, L.; Yang, Kyounghoon, 2003 IEEE International Symposium on Circuits and Systems, v.4, pp.900 - 903, IEEE, 2003-05-25 |
Performance of OFDM systems with adaptive nonlinear amplifiers Jong, J. H.; Yang, Kyounghoon; Stark,W. E.; Haddad, G. I., 1999 IEEE Military Communications Conference, pp.1110 - 1114, IEEE, 1999-10-31 |
Power optimization of OFDM systems with DC bias controlled nonlinear amplifiers Jong, J. H.; Yang, Kyounghoon; Stark, W.E.; Haddad G.I., IEEE VTS 50th Vehicular Technology Conference, VTC 1999-Fall, v.50, no.1, pp.268 - 272, IEEE, 1999-09-19 |
Practical Application of Quantum-effect Device Technology Yang, Kyounghoon, Nanotech Symposium & Exhibition in Korea, 2008 |
Quantum-Effect RTD-Based Microwave Amplifier for ISM-band Low-Power Applications Lee, Jong Won; Lee, Jooseok; Kim, Maengkyu; Yang, Kyounghoon, 7th Global Symposium on Millimeter-Waves 2014, KIEES, 2014-05-22 |
Reduction of extrinsic base-collector capacitance in InP/InGaAs SHBTs using a new base pad design Song, Y.; Yang, Kyounghoon, 14th Indium Phosphide and Related Materials Conference, pp.165 - 168, IEEE, 2002-05-12 |
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