Numerical study of the DC characteristics of InGaAs abrupt emitter HBT's using a self-consistent boundary condition approach

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Issue Date
1993-11-01
Language
ENG
Citation

Int. Semicond. Device Research Symp., pp.551 - 554

URI
http://hdl.handle.net/10203/111648
Appears in Collection
EE-Conference Papers(학술회의논문)
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