Reduction of extrinsic base-collector capacitance in InP/InGaAs SHBTs using a new base pad design

Publisher
IEEE
Issue Date
2002-05-12
Language
ENG
Citation

14th Indium Phosphide and Related Materials Conference, pp.165 - 168

ISSN
1092-8669
URI
http://hdl.handle.net/10203/1167
Appears in Collection
EE-Conference Papers(학술회의논문)
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