Reduction of extrinsic base-collector capacitance in InP/InGaAs SHBTs using a new base pad design
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Song, Y. | - |
| dc.contributor.author | Yang, Kyounghoon | - |
| dc.date.accessioned | 2007-08-30T06:31:41Z | - |
| dc.date.available | 2007-08-30T06:31:41Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2002-05-12 | - |
| dc.identifier.citation | 14th Indium Phosphide and Related Materials Conference, v., no., pp.165 - 168 | - |
| dc.identifier.issn | 1092-8669 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/1167 | - |
| dc.language | ENG | - |
| dc.language.iso | en_US | en |
| dc.publisher | IEEE | - |
| dc.title | Reduction of extrinsic base-collector capacitance in InP/InGaAs SHBTs using a new base pad design | - |
| dc.type | Conference | - |
| dc.identifier.scopusid | 2-s2.0-0036045641 | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 165 | - |
| dc.citation.endingpage | 168 | - |
| dc.citation.publicationname | 14th Indium Phosphide and Related Materials Conference | - |
| dc.identifier.conferencecountry | Sweden | - |
| dc.identifier.conferencecountry | Sweden | - |
| dc.contributor.localauthor | Yang, Kyounghoon | - |
| dc.contributor.nonIdAuthor | Song, Y. | - |
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