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Showing results 156661 to 156680 of 279406

156661
Plasma-assisted molecular-beam epitaxy of ZnO films on (0001) Al2O3: Effects of the MgO buffer layer thickness

Kim, Jae Goo; Han, Seok Kyu; Kang, Dong-Suk; Yang, Sang Mo; Hong, Soon-Ku; Lee, Jae Wook; Lee, Jeong Yong; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, no.1, pp.271 - 275, 2008-07

156662
Plasma-Assisted Multi-Metallic Oxyhydroxides for Efficient Electrocatalytic Oxygen Evolution Reaction

Moon, Byeong Cheul; Kang, Jeung Ku, 2018 IUMRS-ICEM, The Materials Research Society of Korea, Internatinal Union of Materials Research Societies, 2018-08-21

156663
Plasma-assisted selective catalytic reduction of NOx over Ag/γ-Al2O3 with dodecane as reducing agent at low temperature

Nguyen, Duc Ba; Matyakubov, Nosir; Saud, Shirjana; 목영선; 이수민; 명재욱, 한국화학공학회 2021년도 봄 총회 및 학술대회, 한국화학공학회, 2021-04-23

156664
Plasma-assisted water-based Al2O3 ceramic coating for polyethylene-based microporous separators for lithium metal secondary batteries

Jeon, Hyunkyu; Jin, So Yeon; Park, Won Ho; Lee, Hongkyung; Kim, Hee-Tak; Ryou, Myung-Hyun; Lee, Yong Min, ELECTROCHIMICA ACTA, v.212, pp.649 - 656, 2016-09

156665
PLASMA-CONCENTRATION OF ATRIAL NATRIURETIC PEPTIDE IN DIFFERENT PHASES OF KOREAN HEMORRHAGIC-FEVER

CHO, KW; KIM, SH; Koh, Gou Young; SEUL, KH; HUH, KS; CHU, D; RAPP, NS; et al, NEPHRON, v.51, no.2, pp.215 - 219, 1989-02

156666
Plasma-Electron Coirradiation induced Fabrication of Hexagonal Non-Close-Packed Colloidal crystal monolayer

김재준; 조성오, 한국원자력학회 춘계학술대회, 한국원자력학회, 2011-05-25

156667
Plasma-enhanced ALD of titanium-silicon-nitride using TiCl4, SiH4, and N-2/H-2/Ar plasma

Park, JS; Kang, SW, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.7, no.8, pp.C87 - C89, 2004

156668
Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4, SiH4, and N2/H2/Ar Plasma

KANG SANG WON, Atomic Layer Deposition (ALD) 2002, 2002-01-01

156669
Plasma-Enhanced Atomic Layer Deposition of Aluminum Grown by a Sequential Supply of TMA and H2

Kang, Sang-Won, 3rd International AVS Conference on Microelectronics and Interfaces, ICMI, 2002-02

156670
Plasma-enhanced atomic layer deposition of HfO2 thin films using oxygen plasma

Park, P.K.; Kang, Sungwon, 208th Meeting of The Electrochemical Society, pp.915 -, 2005-10-16

156671
Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer

Jeong S.-J.; Shin Y.R.; Kwack W.S.; Lee H.W.; Jeong Y.K.; Kim D.I.; Kim H.C.; et al, SURFACE & COATINGS TECHNOLOGY, v.205, no.21-22, pp.5009 - 5013, 2011-08

156672
Plasma-enhanced atomic layer deposition of Ru-TiN thin films for copper diffusion barrier metals

Kwon, SH; Kwon, OK; Min, JS; Kang, SW, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.153, no.6, pp.G578 - G581, 2006

156673
Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for the Application of Cu Diffusion Barrier

KANG SANG WON, AVS 6th International Conference on Atomic Layer Deposition, pp.0 - 0, 2004-08-01

156674
Plasma-enhanced atomic layer deposition of ruthenium thin films

Kwon, OK; Kwon, SH; Park, HS; Kang, SW, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.7, no.4, pp.C46 - C48, 2004

156675
Plasma-enhanced atomic layer deposition of Ta(C)N thin films for copper diffusion barrier

Kim K.H.; Seong-Jun Jeong; Yoon J.S.; Kim Y.M.; Kwon S.H., 5th Symposium on Atomic Layer Deposition - 216th Meeting of the Electrochemical Society, v.25, pp.301 - 308, 2009-10-05

156676
Plasma-enhanced atomic layer deposition of Ta-N thin films

Park, JS; Park, HS; Kang, Sang-Won, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.149, no.1, pp.28 - 32, 2002-01

156677
Plasma-enhanced atomic layer deposition of TaN thin films using tantalum-pentafluoride and N-2/H-2/Ar plasma

Chung, Hoi-Sung; Kwon, Jung-Dae; Kang, Sang-Won, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.153, no.11, pp.C751 - C754, 2006

156678
Plasma-enhanced atomic layer deposition of tantalum nitrides using hydrogen radicals as a reducing agent

Park, JS; Lee, MJ; Lee, CS; Kang, Sang-Won, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.4, no.4, pp.17 - 19, 2001-04

156679
Plasma-Enhanced Atomic Layer Deposition of TiAlN

KANG SANG WON, 4th International AVS Conference on Microelectronics and Interfaces, pp.0 - 0, 2003-01-01

156680
Plasma-enhanced atomic layer deposition of TiN thin film using TiCl4 and N2/H2/Ar radicals

KANG SANG WON, Atomic layer Deposition (ALD) 2002, 2002-01-01

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