Plasma-enhanced ALD of titanium-silicon-nitride using TiCl4, SiH4, and N-2/H-2/Ar plasma

Thin films of Ti-Si-N were deposited by plasma-enhanced atomic layer deposition (PEALD) using TiCl4, SiH4, and N-2 /H-2 /Ar radicals at 350degreesC. When the reactants were supplied in the sequence of TiCl4 pulse, SiH4 pulse, then N-2 /H-2 /Ar plasma, the thickness per cycle and Si content in Ti-Si-N thin film saturated at 0.73 Angstrom/cycle and 8.5 atom % (Cl less than or equal to 0.5 atom %), respectively. The thickness per cycle is different from that of metallorganic ALD (MOALD). Although X-ray diffraction did not detect the presence of silicon nitride, the silicon nitride phase was investigated by electron spectroscopy for chemical analysis. The addition of Si in Ti-Si-N thin films results in increased resistivity (approximately 500 muOmega cm) and improved Cu diffusion barrier properties due to the Si3N4 phase. (C) 2004 The Electrochemical Society.
Publisher
Electrochemical Soc Inc
Issue Date
2004
Language
ENG
Keywords

ATOMIC-LAYER DEPOSITION; CHEMICAL-VAPOR-DEPOSITION; DIFFUSION-BARRIERS; CU METALLIZATIONS; THIN-FILMS; SYSTEM; TIN

Citation

ELECTROCHEMICAL AND SOLID STATE LETTERS, v.7, no.8, pp.C87 - C89

ISSN
1099-0062
DOI
10.1149/1.1764413
URI
http://hdl.handle.net/10203/3064
Appears in Collection
MS-Journal Papers(저널논문)
  • Hit : 527
  • Download : 36
  • Cited 0 times in thomson ci
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡClick to seewebofscience_button
⊙ Cited 8 items in WoSClick to see citing articles inrecords_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0