Plasma-enhanced atomic layer deposition of TaN thin films using tantalum-pentafluoride and N-2/H-2/Ar plasma

TaN thin films were grown by plasma-enhanced atomic layer deposition using tantalum-pentafluoride (TaF5) as the metal precursor and N-2/H-2/Ar plasma as the reducing agent at a temperature of 350 degrees C. When the source pulse time exceeded 1.5 s, the thickness per cycle of TaN thin films was saturated at 0.41 angstrom/cycle and the resistivity was about 610 mu Omega cm. Under this condition, the TaN thin films had a high density (14.6 g/cm(3)), which was very close to the theoretical value (15.8 g/cm(3)), and fluorine or hydrogen impurities were below detection limit. The resistivity and N/Ta ratio of the TaN thin films increased with the plasma time, and did not saturate. In addition, increasing the N-2/H-2 ratio induced a sudden rise in the resistivity, which was related to the formation of a Ta3N5 phase. This dielectric phase was reduced by lowering the N-2/H-2 ratio. In addition, when H-2 plasma post-treatment was applied to the deposition process, the resistivity of the TaN thin films was reduced to 400 mu Omega cm. (c) 2006 The Electrochemical Society.
Publisher
Electrochemical Soc Inc
Issue Date
2006
Language
ENG
Keywords

GROWTH

Citation

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.153, no.11, pp.C751 - C754

ISSN
0013-4651
DOI
10.1149/1.2344834
URI
http://hdl.handle.net/10203/1282
Appears in Collection
MS-Journal Papers(저널논문)
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