Plasma-enhanced atomic layer deposition of ruthenium thin films

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Plasma-enhanced atomic layer deposition (PEALD) of ruthenium thin films was performed using an alternate supply of bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)(2)] and NH3 plasma. NH3 plasma acted as an effective reducing agent for Ru(EtCp)(2). The ruthenium film formed during one deposition cycle was saturated at 0.038 nm/cycle, and its resistivity was 12 muOmega cm. No carbon or nitrogen impurities were incorporated in the film as determined by elastic recoil detection time of flight. The film density was higher than that formed by a conventional ALD, in which oxygen was used. The root-mean-square surface roughness of a 50 nm thick PELAD ruthenium film was 0.7 nm. (C) 2004 The Electrochemical Society.
Publisher
Electrochemical Soc Inc
Issue Date
2004
Language
ENG
Article Type
Article
Keywords

CHEMICAL-VAPOR-DEPOSITION; COPPER; INTERCONNECTIONS; OXIDATION; CATALYST; GROWTH; METAL; TIN; CU

Citation

ELECTROCHEMICAL AND SOLID STATE LETTERS, v.7, no.4, pp.C46 - C48

ISSN
1099-0062
DOI
10.1149/1.1648612
URI
http://hdl.handle.net/10203/3063
Appears in Collection
MS-Journal Papers(저널논문)
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