Browse by Subject work function

Showing results 1 to 23 of 23

1
A study of device design and process integration for graphene FET = 그래핀 트랜지스터의 소자 구조 및 집적 공정 개발에 대한 연구link

Song, Seung Min; 송승민; et al, 한국과학기술원, 2015

2
(A) study on an amorphous silicon solar cell using molybdenum oxide film as a window layer = 산화 몰리브덴 막을 창층으로 이용한 비정질 실리콘 태양전지에 관한 연구link

Park, Sang-Il; 박상일; et al, 한국과학기술원, 2012

3
Carrier Density-Tunable Work Function Buffer at the Channel/Metallization Interface for Amorphous Oxide Thin-Film Transistors

Liu, Mingyuan; Kim, Hyeonghun; Wang, Xingyu; Song, Han Wook; No, Kwangsoo; Lee, Sunghwan, ACS APPLIED ELECTRONIC MATERIALS, v.3, no.6, pp.2703 - 2711, 2021-06

4
Characteristics of organic light emitting diodes with Al-doped ZnO anode deposited by atomic layer deposition

Park, SHK; Lee, JI; Hwang, CS; Chu, HY, JAPANESE JOURNAL OF APPLIED PHYSICS, v.44, no.1-7, pp.242 - 245, 2005

5
Charge transfer at oxygen/zirconia interface at elevated temperatures - Part 9: Room temperature

Nowotny, MK; Bak, T; Nowotny, J; Sorrell, CC; Prince, KE; Kang, Suk-Joong L, ADVANCES IN APPLIED CERAMICS, v.104, no.4, pp.206 - 213, 2005-08

6
Charge Transfer Dynamics of Doped Graphene Electrodes for Organic Light-Emitting Diodes

Park, Ick-Joon; Kim, Tae In; Choi, Sung-Yool, ACS APPLIED MATERIALS & INTERFACES, v.14, no.38, pp.43907 - 43916, 2022-09

7
Contact resistance in graphene channel transistors

Song, Seung Min; Cho, Byung Jin, Carbon Letters, v.14, no.3, pp.162 - 170, 2013-07

8
Determination of Work Function of Graphene under a Metal Electrode and Its Role in Contact Resistance

Song, Seung Min; Park, Jong Kyung; Sul, One Jae; Cho, Byung Jin, NANO LETTERS, v.12, no.8, pp.3887 - 3892, 2012-08

9
Direct Electrochemical Functionalization of Graphene Grown on Cu Including the Reaction Rate Dependence on the Cu Facet Type

Kim, Minhyeok; Joo, Se Hun; Wang, Meihui; Menabde, Sergey G.; Luo, Da; Jin, Sunghwan; Kim, Hyeongjun; et al, ACS NANO, v.17, no.19, pp.18914 - 18923, 2023-10

10
Dopant-free FUSI PtxSi metal gate for high work function and reduced Fermi-level pinning

Park, CS; Cho, Byung Jin, IEEE ELECTRON DEVICE LETTERS, v.26, no.11, pp.796 - 798, 2005-11

11
Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process

Park, CS; Cho, Byung Jin; Balasubramanian, N; Kwong, DL, THIN SOLID FILMS, v.462, pp.15 - 18, 2004-09

12
Field emission characteristics of COSi2/TaN-coated silicon emitter tips

Han, BW; Lee, JS; Ahn, Byung Tae, IEEE ELECTRON DEVICE LETTERS, v.23, no.1, pp.10 - 12, 2002-01

13
Field emission characteristics of CoSi2/TiN-coated silicon emitter tips

Han, BW; Lee, HS; Ahn, Byung Tae, APPLIED SURFACE SCIENCE, v.187, no.1-2, pp.45 - 50, 2002-02

14
Graphene electrode with tunable charge transport in thin-film transistors

Park, Ick Joon; Kim, Tae In; Cho, In-Tak; Song, Chang-Woo; Yang, Ji-Woong; Park, Hongkeun; Cheong, Woo-Seok; et al, NANO RESEARCH, v.11, no.1, pp.274 - 286, 2018-01

15
Improvement of work function and hole injection efficiency of graphene anode using CHF3 plasma treatment

Cho, Himchan; Kim, Seong Dae; Han, Tae-Hee; Song, Intek; Byun, Jin-Woo; Kim, Young-Hoon; Kwon, Sungjoo; et al, 2D MATERIALS, v.2, no.1, 2015-03

16
Long-Range Lattice Engineering of MoTe2 by a 2D Electride

Kim, Sera; Song, Seunghyun; Park, Jongho; Yu, Ho Sung; Cho, Suyeon; Kim, Dohyun; Baik, Jaeyoon; et al, NANO LETTERS, v.17, no.6, pp.3363 - 3368, 2017-06

17
Modulation of Solvation Structure and Electrode Work Function by an Ultrathin Layer of Polymer of Intrinsic Microporosity in Zinc Ion Batteries

Heo, Jiyun; Hwang, Young-Eun; Doo, Gisu; Jung, Jinkwan; Shin, Kyungjae; Koh, Dong-Yeun; Kim, Hee-Tak, SMALL, v.18, no.25, pp.2201163, 2022-06

18
Modulation of the Electronic Properties of MXene (Ti3C2Tx) via Surface-Covalent Functionalization with Diazonium

Jing, Hongyue; Yeo, Hyeonwoo; Lyu, Benzheng; Ryou, Junga; Choi, Seunghyuk; Park, Jin-Hong; Lee, Byoung Hun; et al, ACS NANO, v.15, no.1, pp.1388 - 1396, 2021-01

19
Size effect of nanometer vacuum gap thermionic power conversion device with CsI coated graphite electrodes

Lee, JeongIk; Jeong, Yong Hoon; No, Hee Cheon; Hannebauer, Rob; Yoo, Sang-Keun, APPLIED PHYSICS LETTERS, v.95, no.22, 2009-11

20
The effect of Al segregation on Schottky barrier height and effective work function in TiAl/TiN/HfO2 gate stacks

Kim, Geun Myeong; Oh, Young Jun; Chang, Kee Joo, JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.49, no.27, pp.275104 - 275104, 2016-07

21
The effect of dielectric constant and work function on triboelectric nanogenerators: Analytical and numerical study

Kim, Seong Min; Ha, Jaewook; Kim, Jin-Baek, INTEGRATED FERROELECTRICS, v.176, no.1, pp.251 - 256, 2016

22
Thermal instability of effective work function in metal/high-kappa stack and its material dependence

Joo, MS; Cho, Byung Jin; Balasubramanian, N; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.11, pp.716 - 718, 2004-11

23
Work function engineering of SnO single crystal microplates with thermal annealing

Doh, Won Hui; Jeong, Wooseok; Lee, Hyunsoo; Park, Jonghyurk; Park, Jeong Young, NANOTECHNOLOGY, v.27, no.33, 2016-08

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