Thermal instability of effective work function in metal/high-kappa stack and its material dependence

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Thermal instability of effective work function and its material dependence on metal/high-kappa gate stacks is investigated. It is found that thermal instability of the effective work function of metal electrode on a gate dielectric is strongly dependent on the gate electrode and dielectric material. Thermal instability of a metal gate is related to the presence of silicon at the interface, and the Fermi-level pinning position is dependent on the location of silicon at the interface. The silicon-metal or metal-silicon bond formation by thermal anneal at the metal/dielectric interface induces the donor-like or acceptor-like interface states, causing a change of effective work function.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2004-11
Language
English
Article Type
Article
Keywords

SCHOTTKY-BARRIER; INTERFACE; SILICON

Citation

IEEE ELECTRON DEVICE LETTERS, v.25, no.11, pp.716 - 718

ISSN
0741-3106
DOI
10.1109/led.2004.836763
URI
http://hdl.handle.net/10203/79343
Appears in Collection
EE-Journal Papers(저널논문)
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