Contact resistance in graphene channel transistors

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The performance of graphene-based electronic devices is critically affected by the quality of the graphene-metal contact. The understanding of graphene-metal is therefore critical for the successful development of graphene-based electronic devices, especially field-effect-transistors. Here, we provide a review of the peculiar properties of graphene-metal contacts, including work function pinning, the charge transport mechanism, the impact of the process on the contract resistance, and other factors.
Publisher
한국탄소학회
Issue Date
2013-07
Language
Korean
Citation

Carbon Letters, v.14, no.3, pp.162 - 170

ISSN
1976-4251
URI
http://hdl.handle.net/10203/187074
Appears in Collection
EE-Journal Papers(저널논문)
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