DC Field | Value | Language |
---|---|---|
dc.contributor.author | Song, Seung Min | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.date.accessioned | 2014-08-26T08:05:41Z | - |
dc.date.available | 2014-08-26T08:05:41Z | - |
dc.date.created | 2013-10-03 | - |
dc.date.created | 2013-10-03 | - |
dc.date.issued | 2013-07 | - |
dc.identifier.citation | Carbon Letters, v.14, no.3, pp.162 - 170 | - |
dc.identifier.issn | 1976-4251 | - |
dc.identifier.uri | http://hdl.handle.net/10203/187074 | - |
dc.description.abstract | The performance of graphene-based electronic devices is critically affected by the quality of the graphene-metal contact. The understanding of graphene-metal is therefore critical for the successful development of graphene-based electronic devices, especially field-effect-transistors. Here, we provide a review of the peculiar properties of graphene-metal contacts, including work function pinning, the charge transport mechanism, the impact of the process on the contract resistance, and other factors. | - |
dc.language | Korean | - |
dc.publisher | 한국탄소학회 | - |
dc.title | Contact resistance in graphene channel transistors | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.citation.volume | 14 | - |
dc.citation.issue | 3 | - |
dc.citation.beginningpage | 162 | - |
dc.citation.endingpage | 170 | - |
dc.citation.publicationname | Carbon Letters | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.identifier.kciid | ART001791110 | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Song, Seung Min | - |
dc.subject.keywordAuthor | graphene | - |
dc.subject.keywordAuthor | contact resistance | - |
dc.subject.keywordAuthor | work function | - |
dc.subject.keywordAuthor | charge transport | - |
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