Dopant-free FUSI PtxSi metal gate for high work function and reduced Fermi-level pinning

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High work function (4.9 eV) on high-kappa gate dielectric, which is suitable for bulk p-MOSFET, has been achieved using fully silicided (FUSI) PtxSi gate without boron predoping of polysilicon. High concentration of Pt in FUSI PtxSi using Ti capping layer on Pt in the FUSI process is a key to achieving high work function and reduced Fermi-level pinning on high-kappa dielectric. By combining with substituted Al (SA) gate for nMOSFET, a wide range of work function difference (0.65 eV) between n and pMOSFETs is demonstrated, without any adverse effects of polysilicon predoping.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2005-11
Language
English
Article Type
Article
Keywords

THERMAL-INSTABILITY; FILMS

Citation

IEEE ELECTRON DEVICE LETTERS, v.26, no.11, pp.796 - 798

ISSN
0741-3106
DOI
10.1109/LED.2005.857711
URI
http://hdl.handle.net/10203/92717
Appears in Collection
EE-Journal Papers(저널논문)
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