Analytical Modeling of a Nanogap-Embedded FET for Application as a Biosensor

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An analytical model of a nanogap-embedded field-effect transistor, which is termed here simply as a biotransistor, is developed in this study. A surface potential model is attained by solving a 2-D Poisson equation with approximation of a parabolic potential profile along the channel depth. The analytical threshold voltage is then derived from the surface potential model to comprise the unique feature of the biotransistor, which acts as a biosensor. A shift of the threshold voltage was used as a metric to ascertain the sensitivity after the biomolecule interacts with the biotransistor. Various device parameters were investigated in the developed analytical model. The characteristic trend is supported and verified via a simulation. Hence, the proposed model can provide a useful guideline for the optimal design and fabrication of a biotransistor.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2010-12
Language
English
Article Type
Article
Keywords

FIELD-EFFECT TRANSISTOR; LABEL-FREE DETECTION; NANOWIRE NANOSENSORS; ELECTRICAL DETECTION; SHORT-CHANNEL; SOI MOSFETS; DNA

Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.12, pp.3477 - 3484

ISSN
0018-9383
DOI
10.1109/TED.2010.2076152
URI
http://hdl.handle.net/10203/97115
Appears in Collection
EE-Journal Papers(저널논문)
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