Analytical Modeling of a Nanogap-Embedded FET for Application as a Biosensor

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dc.contributor.authorChoi, Ji-Minko
dc.contributor.authorHan, Jin-Wooko
dc.contributor.authorChoi, Sung-Jinko
dc.contributor.authorChoi, Yang-Kyuko
dc.date.accessioned2013-03-09T18:19:40Z-
dc.date.available2013-03-09T18:19:40Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2010-12-
dc.identifier.citationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.12, pp.3477 - 3484-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10203/97115-
dc.description.abstractAn analytical model of a nanogap-embedded field-effect transistor, which is termed here simply as a biotransistor, is developed in this study. A surface potential model is attained by solving a 2-D Poisson equation with approximation of a parabolic potential profile along the channel depth. The analytical threshold voltage is then derived from the surface potential model to comprise the unique feature of the biotransistor, which acts as a biosensor. A shift of the threshold voltage was used as a metric to ascertain the sensitivity after the biomolecule interacts with the biotransistor. Various device parameters were investigated in the developed analytical model. The characteristic trend is supported and verified via a simulation. Hence, the proposed model can provide a useful guideline for the optimal design and fabrication of a biotransistor.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectFIELD-EFFECT TRANSISTOR-
dc.subjectLABEL-FREE DETECTION-
dc.subjectNANOWIRE NANOSENSORS-
dc.subjectELECTRICAL DETECTION-
dc.subjectSHORT-CHANNEL-
dc.subjectSOI MOSFETS-
dc.subjectDNA-
dc.titleAnalytical Modeling of a Nanogap-Embedded FET for Application as a Biosensor-
dc.typeArticle-
dc.identifier.wosid000284417700032-
dc.identifier.scopusid2-s2.0-78649991349-
dc.type.rimsART-
dc.citation.volume57-
dc.citation.issue12-
dc.citation.beginningpage3477-
dc.citation.endingpage3484-
dc.citation.publicationnameIEEE TRANSACTIONS ON ELECTRON DEVICES-
dc.identifier.doi10.1109/TED.2010.2076152-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorBiotransistor-
dc.subject.keywordAuthorDielectric-modulated field-effect transistor (DMFET)-
dc.subject.keywordAuthorfield-effect transistor (FET)-type biosensor-
dc.subject.keywordAuthornanogap-
dc.subject.keywordAuthornanogap-embedded FET-
dc.subject.keywordAuthorsensitivity-
dc.subject.keywordAuthorsurface potential-
dc.subject.keywordAuthorthreshold voltage-
dc.subject.keywordAuthor2-D modeling-
dc.subject.keywordAuthor2-D Poisson equation-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTOR-
dc.subject.keywordPlusLABEL-FREE DETECTION-
dc.subject.keywordPlusNANOWIRE NANOSENSORS-
dc.subject.keywordPlusELECTRICAL DETECTION-
dc.subject.keywordPlusSHORT-CHANNEL-
dc.subject.keywordPlusSOI MOSFETS-
dc.subject.keywordPlusDNA-
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