A low-temperature-grown TiO2-based device for the flexible stacked RRAM application

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Flexible TiO2 crossbar memory device arrays were fabricated on plastic substrates using amorphous titanium oxide thin films grown by the low-temperature plasma-enhanced atomic layer deposition method. Al/TiO2/Al memory cells on polyethersulfone (PES) showed an enhanced endurance property (up to 10(4) cycles) and low switching voltages compared to the cells on rigid substrates. The multi-stacked memory arrays were constructed by forming the additional Al/TiO2/Al layer on the first memory device layer. Memory cells on each layer exhibited stable switching characteristics and mechanical robustness without interlayer cell-to-cell interference.
Publisher
IOP PUBLISHING LTD
Issue Date
2010-03
Language
English
Article Type
Article
Citation

NANOTECHNOLOGY, v.21, no.11

ISSN
0957-4484
URI
http://hdl.handle.net/10203/95794
Appears in Collection
MS-Journal Papers(저널논문)EE-Journal Papers(저널논문)
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