DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeong, Hu Young | ko |
dc.contributor.author | Kim, Yong In | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.contributor.author | Choi, Sung-Yool | ko |
dc.date.accessioned | 2013-03-09T07:56:35Z | - |
dc.date.available | 2013-03-09T07:56:35Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2010-03 | - |
dc.identifier.citation | NANOTECHNOLOGY, v.21, no.11 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | http://hdl.handle.net/10203/95794 | - |
dc.description.abstract | Flexible TiO2 crossbar memory device arrays were fabricated on plastic substrates using amorphous titanium oxide thin films grown by the low-temperature plasma-enhanced atomic layer deposition method. Al/TiO2/Al memory cells on polyethersulfone (PES) showed an enhanced endurance property (up to 10(4) cycles) and low switching voltages compared to the cells on rigid substrates. The multi-stacked memory arrays were constructed by forming the additional Al/TiO2/Al layer on the first memory device layer. Memory cells on each layer exhibited stable switching characteristics and mechanical robustness without interlayer cell-to-cell interference. | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | A low-temperature-grown TiO2-based device for the flexible stacked RRAM application | - |
dc.type | Article | - |
dc.identifier.wosid | 000274936700006 | - |
dc.identifier.scopusid | 2-s2.0-77349115766 | - |
dc.type.rims | ART | - |
dc.citation.volume | 21 | - |
dc.citation.issue | 11 | - |
dc.citation.publicationname | NANOTECHNOLOGY | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.localauthor | Choi, Sung-Yool | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | OXIDE | - |
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