Controlling the temperature coefficient of resistance and resistivity in RuO2-TiO2 thin films by the intermixing ratios between RuO2 and TiO2

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The temperature coefficient of resistance (TCR) properties and resistivities, depending on the RuO(2) intermixing ratios for RuO(2)-TiO(2) thin films and their thermal stability in the temperature range of 200-700 degrees C, were investigated. The TCR values for the RuO(2)-TiO(2) thin films ranged from -557.17 to -54.923 ppm/K for the RuO(2) intermixing ratios ranging from 0.52 to 0.81, with resistivities remaining in the range of 2600-370 mu Omega cm. Moreover, the high structural stability and its stable oxide form of the RuO(2)-TiO(2) thin films resulted in minimal change in both TCR values and resistivities even after O(2) annealing process at 700 degrees C. (C) 2008 American Institute of Physics.
Publisher
Amer Inst Physics
Issue Date
2008-05
Language
English
Article Type
Article
Keywords

DEPOSITION; STABILITY; RESISTORS

Citation

APPLIED PHYSICS LETTERS, v.92, no.18

ISSN
0003-6951
DOI
10.1063/1.2918989
URI
http://hdl.handle.net/10203/87252
Appears in Collection
MS-Journal Papers(저널논문)
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