Controlling the temperature coefficient of resistance and resistivity in RuO2-TiO2 thin films by the intermixing ratios between RuO2 and TiO2

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dc.contributor.authorKwon, Se-Hunko
dc.contributor.authorKang, Sang-Wonko
dc.contributor.authorKim, Kwang-Hoko
dc.date.accessioned2013-03-06T14:27:39Z-
dc.date.available2013-03-06T14:27:39Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2008-05-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.92, no.18-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/87252-
dc.description.abstractThe temperature coefficient of resistance (TCR) properties and resistivities, depending on the RuO(2) intermixing ratios for RuO(2)-TiO(2) thin films and their thermal stability in the temperature range of 200-700 degrees C, were investigated. The TCR values for the RuO(2)-TiO(2) thin films ranged from -557.17 to -54.923 ppm/K for the RuO(2) intermixing ratios ranging from 0.52 to 0.81, with resistivities remaining in the range of 2600-370 mu Omega cm. Moreover, the high structural stability and its stable oxide form of the RuO(2)-TiO(2) thin films resulted in minimal change in both TCR values and resistivities even after O(2) annealing process at 700 degrees C. (C) 2008 American Institute of Physics.-
dc.languageEnglish-
dc.publisherAmer Inst Physics-
dc.subjectDEPOSITION-
dc.subjectSTABILITY-
dc.subjectRESISTORS-
dc.titleControlling the temperature coefficient of resistance and resistivity in RuO2-TiO2 thin films by the intermixing ratios between RuO2 and TiO2-
dc.typeArticle-
dc.identifier.wosid000256485700018-
dc.identifier.scopusid2-s2.0-43349097919-
dc.type.rimsART-
dc.citation.volume92-
dc.citation.issue18-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.2918989-
dc.contributor.localauthorKang, Sang-Won-
dc.contributor.nonIdAuthorKim, Kwang-Ho-
dc.type.journalArticleArticle-
dc.subject.keywordPlusDEPOSITION-
dc.subject.keywordPlusSTABILITY-
dc.subject.keywordPlusRESISTORS-
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