Effects of asymmetric distribution of charged defects on the hysteresis curves of ferroelectric capacitors

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 295
  • Download : 0
When a ferroelectric film has an inhomogeneous distribution of charged defects, a voltage shift in the polarization curve is induced by the internal field generated in the film. The direction and the magnitude of voltage shift in the P-V hysteresis curves obtained by the Sawyer-Tower method are different from those obtained by the virtual ground method. In this study, the asymmetric behavior in the P-V hysteresis curves of inhomogeneous ferroelectric films was investigated with a physical model and the polarization curves obtained by the Sawyer-Tower and the virtual ground methods are compared.
Publisher
International Microelectronics And Packaging Society
Issue Date
2005-03
Language
English
Citation

JOURNAL OF MICROELECTRONICS AND ELECTRONIC PACKAGING, v.12, no.3, pp.219 - 226

ISSN
1226-9360
URI
http://hdl.handle.net/10203/86867
Appears in Collection
MS-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0