Effects of asymmetric distribution of charged defects on the hysteresis curves of ferroelectric capacitors

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dc.contributor.authorLee, Kang-Woonko
dc.contributor.authorKim, Yong-Ilko
dc.contributor.authorLee, Won-Jongko
dc.date.accessioned2013-03-06T11:39:14Z-
dc.date.available2013-03-06T11:39:14Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2005-03-
dc.identifier.citationJOURNAL OF MICROELECTRONICS AND ELECTRONIC PACKAGING, v.12, no.3, pp.219 - 226-
dc.identifier.issn1226-9360-
dc.identifier.urihttp://hdl.handle.net/10203/86867-
dc.description.abstractWhen a ferroelectric film has an inhomogeneous distribution of charged defects, a voltage shift in the polarization curve is induced by the internal field generated in the film. The direction and the magnitude of voltage shift in the P-V hysteresis curves obtained by the Sawyer-Tower method are different from those obtained by the virtual ground method. In this study, the asymmetric behavior in the P-V hysteresis curves of inhomogeneous ferroelectric films was investigated with a physical model and the polarization curves obtained by the Sawyer-Tower and the virtual ground methods are compared.-
dc.languageEnglish-
dc.publisherInternational Microelectronics And Packaging Society-
dc.titleEffects of asymmetric distribution of charged defects on the hysteresis curves of ferroelectric capacitors-
dc.typeArticle-
dc.type.rimsART-
dc.citation.volume12-
dc.citation.issue3-
dc.citation.beginningpage219-
dc.citation.endingpage226-
dc.citation.publicationnameJOURNAL OF MICROELECTRONICS AND ELECTRONIC PACKAGING-
dc.contributor.localauthorLee, Won-Jong-
dc.contributor.nonIdAuthorLee, Kang-Woon-
dc.contributor.nonIdAuthorKim, Yong-Il-
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MS-Journal Papers(저널논문)
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