Fabrication and characterization of PZT/TiO(x)/SiO(2)/SiN(x)/SiO(2)/Si structure for acousto-optic device applications

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In this study, we fabricated the PZT/TiOx/SiO2/SiNx/SiO2/Si structure for acousto-optic (AO) device applications using the interaction of surface acoustic wave (SAW) and optical beam. SAW was generated using the inter-digital transducer (IDT) on PZT film, and optical beam (He-Ne laser) was guided in SiNx film using prism-coupling method. Two SiO2 layers were used for optical cladding layer, and TiOx for the buffer layer to prevent the inter-diffusion between PZT and SiO2 layers. In this structure, we measured insertion loss of -7dB at minimum point, resonance frequency of 17.6 MHz and sound wave velocity of 8800 m/s under impedance matching condition. We also measured optical propagation loss of the SiNx-film in both SiNx/SiO2/Si and PZT/TiOx/SiO2/SiNx/SiO2/Si structure for confirming the applicability of SiNx film to the waveguide layer.
Publisher
TAYLOR FRANCIS LTD
Issue Date
2001
Language
English
Article Type
Article; Proceedings Paper
Keywords

WAVE

Citation

INTEGRATED FERROELECTRICS, v.35, no.1-4, pp.1741 - 1752

ISSN
1058-4587
URI
http://hdl.handle.net/10203/80488
Appears in Collection
MS-Journal Papers(저널논문)
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