The strain relaxation in a lattice-mismatched heterostructure
Strain relaxation phenomena of the heteroepitaxial lattice-mismatched semiconductors have been investigated. The relationship between the residual in-plane strain and the width of the misfit cell was obtained geometrically. The residual in-plane strain was calculated for various film thicknesses by using the energy minimization theory on the misfit cell in the InxGa1-xAs/GaAs(1 0 0) heterostructure system. A generalized strain relaxation model is presented on the basis of the energy minimization theory. (C) 1999 Elsevier Science B.V. All rights reserved.
- Publisher
- ELSEVIER SCIENCE BV
- Issue Date
- 1999-04
- Language
- English
- Article Type
- Article
- Keywords
MISFIT DISLOCATIONS; LAYER HETEROSTRUCTURES; SEMICONDUCTORS; THICKNESS; STRESSES; GAAS
- Citation
JOURNAL OF CRYSTAL GROWTH, v.200, no.3-4, pp.421 - 426
- ISSN
- 0022-0248
- Appears in Collection
- MS-Journal Papers(저널논문)
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