DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lim, YS | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.contributor.author | Kim, TW | ko |
dc.date.accessioned | 2013-03-03T08:16:51Z | - |
dc.date.available | 2013-03-03T08:16:51Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1999-04 | - |
dc.identifier.citation | JOURNAL OF CRYSTAL GROWTH, v.200, no.3-4, pp.421 - 426 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | http://hdl.handle.net/10203/77924 | - |
dc.description.abstract | Strain relaxation phenomena of the heteroepitaxial lattice-mismatched semiconductors have been investigated. The relationship between the residual in-plane strain and the width of the misfit cell was obtained geometrically. The residual in-plane strain was calculated for various film thicknesses by using the energy minimization theory on the misfit cell in the InxGa1-xAs/GaAs(1 0 0) heterostructure system. A generalized strain relaxation model is presented on the basis of the energy minimization theory. (C) 1999 Elsevier Science B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | MISFIT DISLOCATIONS | - |
dc.subject | LAYER HETEROSTRUCTURES | - |
dc.subject | SEMICONDUCTORS | - |
dc.subject | THICKNESS | - |
dc.subject | STRESSES | - |
dc.subject | GAAS | - |
dc.title | The strain relaxation in a lattice-mismatched heterostructure | - |
dc.type | Article | - |
dc.identifier.wosid | 000079859800012 | - |
dc.identifier.scopusid | 2-s2.0-0032642199 | - |
dc.type.rims | ART | - |
dc.citation.volume | 200 | - |
dc.citation.issue | 3-4 | - |
dc.citation.beginningpage | 421 | - |
dc.citation.endingpage | 426 | - |
dc.citation.publicationname | JOURNAL OF CRYSTAL GROWTH | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | Lim, YS | - |
dc.contributor.nonIdAuthor | Kim, TW | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | strain relaxation | - |
dc.subject.keywordAuthor | misfit cell | - |
dc.subject.keywordAuthor | InGaAs | - |
dc.subject.keywordAuthor | relaxation thickness | - |
dc.subject.keywordAuthor | heterostructure | - |
dc.subject.keywordPlus | MISFIT DISLOCATIONS | - |
dc.subject.keywordPlus | LAYER HETEROSTRUCTURES | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | THICKNESS | - |
dc.subject.keywordPlus | STRESSES | - |
dc.subject.keywordPlus | GAAS | - |
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