EFFECTS OF DEPOSITION TEMPERATURE ON THE ELECTRICAL-PROPERTIES OF ELECTRON-CYCLOTRON-RESONANCE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION TA2O5 FILM AND THE FORMATION OF INTERFACIAL SIO2

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dc.contributor.authorKIM, Iko
dc.contributor.authorKIM, JSko
dc.contributor.authorCHO, BWko
dc.contributor.authorAHN, SDko
dc.contributor.authorChun , Soung Soonko
dc.contributor.authorLee, Won-Jongko
dc.date.accessioned2013-03-03T07:53:48Z-
dc.date.available2013-03-03T07:53:48Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1995-11-
dc.identifier.citationJOURNAL OF MATERIALS RESEARCH, v.10, no.11, pp.2864 - 2869-
dc.identifier.issn0884-2914-
dc.identifier.urihttp://hdl.handle.net/10203/77859-
dc.description.abstractHigh-quality Ta2O5 thin films for high-density memory devices were prepared at low temperatures by electron cyclotron resonance plasma-enhanced chemical vapor depostion (ECR-PECVD) without postannealing treatment. The effects of deposition temperature on the microstructure, composition, and electrical properties of the dielectric films were studied. The increase in deposition temperature from 145 degrees C to 205 degrees C improved the stoichiometry of the Ta2O5 thin films. As a consequence, E(BD) increased from 3.3 MV/cm to 4.4 MV/cm, and epsilon(Ta2O5) increased from 14 to 25, Interfacial SiO2 layer was observed by cross-sectional TEM, and its effects on the electrical properties of the overall dielectric film were also studied. The incubation period in which interfacial SiO2 grows was discussed with regard to reactivity between oxygen and Si substrate.-
dc.languageEnglish-
dc.publisherMATERIALS RESEARCH SOCIETY-
dc.titleEFFECTS OF DEPOSITION TEMPERATURE ON THE ELECTRICAL-PROPERTIES OF ELECTRON-CYCLOTRON-RESONANCE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION TA2O5 FILM AND THE FORMATION OF INTERFACIAL SIO2-
dc.typeArticle-
dc.identifier.wosidA1995TC36700026-
dc.identifier.scopusid2-s2.0-0029403356-
dc.type.rimsART-
dc.citation.volume10-
dc.citation.issue11-
dc.citation.beginningpage2864-
dc.citation.endingpage2869-
dc.citation.publicationnameJOURNAL OF MATERIALS RESEARCH-
dc.contributor.localauthorChun , Soung Soon-
dc.contributor.localauthorLee, Won-Jong-
dc.contributor.nonIdAuthorKIM, I-
dc.contributor.nonIdAuthorKIM, JS-
dc.contributor.nonIdAuthorCHO, BW-
dc.contributor.nonIdAuthorAHN, SD-
dc.type.journalArticleArticle-
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