Microstructure and electric properties of the PZT thin films fabricated by ECR PECVD: the effects of an interfacial layer and rapid thermal annealing

Abstract

Perovskite lead zirconate titanate (PZT) thin films were fabricated un Pt(70 nm)/Ti(100 nm)/SiO2/Si substrates at 470 degrees C and 500 degrees C, respectively, by electron electron resonance plasma-enhanced chemical vapor deposition using metal organic sources. A Ph-deficient interfacial layer was observed between thr PZT film and Pt substrate by cross-rational TEM. which seems to distort thr C-V hysteresis loop of the Pt/PZT/Pt capacitor. PZT thin films deposited at 500 degrees C had thinner interfacial layers and showed better electric properties than those deposited at 470 degrees C. Effects of the interfacial layer and post-heat treatment on the microstructure and electric properties of PZT thin films were investigated. (C) 1998 Elsevier Science S.A.