Room Temperature Single Electron Effects in a Si Nano-Crystal Memory
An MOS memory based on Si nano-crystals has been fabricated. We have developed a repeatable process of forming uniform, small-size and high-density Si nano crystals and spherical nano-crystals of about 4.5 nm in diameter with density of 5 x 10(11)/cm(2) were obtained. Threshold voltage shift of 0.48 V corresponding to single electron storage in individual nano-crystals is obtained. For the first time, room temperature single electron effects are observed. These prove the feasibility of practical Si nano-crystal memory.
- Issue Date
- 1999
- Language
- English
- Article Type
- Article
- Citation
IEEE ELECTRON DEVICE LETTERS, v.20, no.12, pp.630 - 631
- ISSN
- 0741-3106
- Appears in Collection
- RIMS Journal Papers
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- There are no files associated with this item.
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