DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ilgweon Kim | ko |
dc.contributor.author | Sangyeon Han | ko |
dc.contributor.author | Kwangseok Han | ko |
dc.contributor.author | Jongho Leeand Hyungcheol Shin | ko |
dc.date.accessioned | 2013-02-28T04:49:24Z | - |
dc.date.available | 2013-02-28T04:49:24Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1999 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.20, no.12, pp.630 - 631 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/72853 | - |
dc.description.abstract | An MOS memory based on Si nano-crystals has been fabricated. We have developed a repeatable process of forming uniform, small-size and high-density Si nano crystals and spherical nano-crystals of about 4.5 nm in diameter with density of 5 x 10(11)/cm(2) were obtained. Threshold voltage shift of 0.48 V corresponding to single electron storage in individual nano-crystals is obtained. For the first time, room temperature single electron effects are observed. These prove the feasibility of practical Si nano-crystal memory. | - |
dc.language | English | - |
dc.publisher | IEEE-Inst Electrical Electronics Engineers Inc | - |
dc.title | Room Temperature Single Electron Effects in a Si Nano-Crystal Memory | - |
dc.type | Article | - |
dc.identifier.wosid | 000084030400010 | - |
dc.identifier.scopusid | 2-s2.0-0033350529 | - |
dc.type.rims | ART | - |
dc.citation.volume | 20 | - |
dc.citation.issue | 12 | - |
dc.citation.beginningpage | 630 | - |
dc.citation.endingpage | 631 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.contributor.localauthor | Jongho Leeand Hyungcheol Shin | - |
dc.contributor.nonIdAuthor | Ilgweon Kim | - |
dc.contributor.nonIdAuthor | Sangyeon Han | - |
dc.contributor.nonIdAuthor | Kwangseok Han | - |
dc.type.journalArticle | Article | - |
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