Room Temperature Single Electron Effects in a Si Nano-Crystal Memory

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dc.contributor.authorIlgweon Kimko
dc.contributor.authorSangyeon Hanko
dc.contributor.authorKwangseok Hanko
dc.contributor.authorJongho Leeand Hyungcheol Shinko
dc.date.accessioned2013-02-28T04:49:24Z-
dc.date.available2013-02-28T04:49:24Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1999-
dc.identifier.citationIEEE ELECTRON DEVICE LETTERS, v.20, no.12, pp.630 - 631-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10203/72853-
dc.description.abstractAn MOS memory based on Si nano-crystals has been fabricated. We have developed a repeatable process of forming uniform, small-size and high-density Si nano crystals and spherical nano-crystals of about 4.5 nm in diameter with density of 5 x 10(11)/cm(2) were obtained. Threshold voltage shift of 0.48 V corresponding to single electron storage in individual nano-crystals is obtained. For the first time, room temperature single electron effects are observed. These prove the feasibility of practical Si nano-crystal memory.-
dc.languageEnglish-
dc.publisherIEEE-Inst Electrical Electronics Engineers Inc-
dc.titleRoom Temperature Single Electron Effects in a Si Nano-Crystal Memory-
dc.typeArticle-
dc.identifier.wosid000084030400010-
dc.identifier.scopusid2-s2.0-0033350529-
dc.type.rimsART-
dc.citation.volume20-
dc.citation.issue12-
dc.citation.beginningpage630-
dc.citation.endingpage631-
dc.citation.publicationnameIEEE ELECTRON DEVICE LETTERS-
dc.contributor.localauthorJongho Leeand Hyungcheol Shin-
dc.contributor.nonIdAuthorIlgweon Kim-
dc.contributor.nonIdAuthorSangyeon Han-
dc.contributor.nonIdAuthorKwangseok Han-
dc.type.journalArticleArticle-
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