Electrical characterization of PLT thin films by LP-MOCVD
La-modified lead titanate(PLT) thin films were prepared on Pt/SiO2/Si substrate by hot-wall type low pressure-metalorganic chemical vapor deposition(LP-MOCVD). The films were deposited at 500°C under the low pressure of 1000mTorr. The films were annealed at 650°C for 10min with O2 ambient before top-Pt electroding. Schottky emission was observed for Pt/PLT(12)/Pt capacitor. With increasing La mole%, surface morphologies of the PLT films were improved smoothly and leakage current density decreased.
- Publisher
- GORDON BREACH SCI PUBL LTD
- Issue Date
- 1995-11
- Language
- English
- Article Type
- Article; Proceedings Paper
- Citation
INTEGRATED FERROELECTRICS, v.11, no.1-4, pp.137 - 144
- ISSN
- 1058-4587
- Appears in Collection
- MS-Journal Papers(저널논문)
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