Electrical characterization of PLT thin films by LP-MOCVD
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, SS | ko |
| dc.contributor.author | Kim, Ho-Gi | ko |
| dc.date.accessioned | 2013-02-27T20:11:36Z | - |
| dc.date.available | 2013-02-27T20:11:36Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1995-11 | - |
| dc.identifier.citation | INTEGRATED FERROELECTRICS, v.11, no.1-4, pp.137 - 144 | - |
| dc.identifier.issn | 1058-4587 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/70580 | - |
| dc.description.abstract | La-modified lead titanate(PLT) thin films were prepared on Pt/SiO2/Si substrate by hot-wall type low pressure-metalorganic chemical vapor deposition(LP-MOCVD). The films were deposited at 500°C under the low pressure of 1000mTorr. The films were annealed at 650°C for 10min with O2 ambient before top-Pt electroding. Schottky emission was observed for Pt/PLT(12)/Pt capacitor. With increasing La mole%, surface morphologies of the PLT films were improved smoothly and leakage current density decreased. | - |
| dc.language | English | - |
| dc.publisher | GORDON BREACH SCI PUBL LTD | - |
| dc.title | Electrical characterization of PLT thin films by LP-MOCVD | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1995TY23800014 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 11 | - |
| dc.citation.issue | 1-4 | - |
| dc.citation.beginningpage | 137 | - |
| dc.citation.endingpage | 144 | - |
| dc.citation.publicationname | INTEGRATED FERROELECTRICS | - |
| dc.identifier.doi | 10.1080/10584589508013586 | - |
| dc.contributor.localauthor | Kim, Ho-Gi | - |
| dc.contributor.nonIdAuthor | Lee, SS | - |
| dc.description.isOpenAccess | N | - |
| dc.type.journalArticle | Article; Proceedings Paper | - |
- Appears in Collection
- MS-Journal Papers(저널논문)
- Files in This Item
- There are no files associated with this item.
This item is cited by other documents in WoS
| ⊙ Detail Information in WoSⓡ | Click to see |  |
| ⊙ Cited 7 items in WoS | Click to see citing articles in |  |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.