EFFECTS OF ANNEALING ON THE DAMAGE MORPHOLOGIES IN BF2+ ION-IMPLANTED (100)SILICON

Abstract

The effects of annealing on the damage morphologies and impurity redistributions in BF2+ ion implanted (1 0 0) silicon were studied using secondary ion mass spectrometry (SIMS), transmission electron microscopy (TEM) and Rutherford backscattering (RBS) ion beam channelling technique. An amorphized silicon layer and a heavily-damaged crystal layer containing a high density of point-defect clusters, are formed on the silicon wafer by the ion implantation. SIMS depth profiles of both boron and fluorine are almost Gaussian distribution. Both furnace annealing and rapid thermal annealing cause recrystallization of the amorphized layer and formation of dislocation loop bands out of the point defects. SIMS depth profiles for both impurities show anomalous double peaks at the same depths. These facts suggest that the primary peak is due to the peak of the Gaussian distribution and the secondary peak due to the gettering effects of residual dislocation loop band.