PHOTOVOLTAIC PROPERTIES OF SINTERED CDS/CDTE SOLAR-CELLS WITH AN INDIUM-TIN-OXIDE ELECTRODE

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dc.contributor.authorKim, HDko
dc.contributor.authorKim DSko
dc.contributor.authorCho, Kko
dc.contributor.authorAhn, Byung Taeko
dc.contributor.authorIm, HBko
dc.date.accessioned2013-02-25T23:27:51Z-
dc.date.available2013-02-25T23:27:51Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1994-12-
dc.identifier.citationJOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.141, no.12, pp.3572 - 3576-
dc.identifier.issn0013-4651-
dc.identifier.urihttp://hdl.handle.net/10203/66004-
dc.description.abstractIndium-tin-oxide (ITO) electrodes were applied to sintered all-polycrystalline CdS/CdTe solar cells for large area cell fabrication. The CdS and CdTe layers were prepared by sequentially sintering (CdS + CdCl2) slurry at 600 degrees C and (Cd + Te) slurry at 625 degrees C. The length of the cells was fixed at 10 mm and the width was varied from 3 to 9 mm. While the application of ITO did not change the junction properties after a high temperature annealing process, it significantly reduced the series resistance of the cells. As the cell width increased from 3 to 9 mm, the efficiency of CdS/CdTe solar cells with ITO electrode decreased slightly from 10.5 to 9.4%, while that of cells without ITO decreased from 10.4 to 8.4% under the illumination of 50 mW.cm(-2). The efficiency of the cells with ITO were less degraded with increasing cell width because the short-circuit current and fill factor of the cell with ITO changed little. The total area (active + contact area) efficiency of the sintered CdS/CdTe cells without ITO had a maximum value of 6.5% at only 4 mm width. However, that of the cells with ITO electrode increased to 7.6% at 9 mm width. Thus, adopting an ITO electrode enabled us to improve the total area efficiency of the sintered CdS/CdTe solar cells with a large active area.-
dc.languageEnglish-
dc.publisherELECTROCHEMICAL SOC INC-
dc.titlePHOTOVOLTAIC PROPERTIES OF SINTERED CDS/CDTE SOLAR-CELLS WITH AN INDIUM-TIN-OXIDE ELECTRODE-
dc.typeArticle-
dc.identifier.wosidA1994PW60500050-
dc.identifier.scopusid2-s2.0-0028725372-
dc.type.rimsART-
dc.citation.volume141-
dc.citation.issue12-
dc.citation.beginningpage3572-
dc.citation.endingpage3576-
dc.citation.publicationnameJOURNAL OF THE ELECTROCHEMICAL SOCIETY-
dc.contributor.localauthorCho, K-
dc.contributor.localauthorAhn, Byung Tae-
dc.contributor.nonIdAuthorKim, HD-
dc.contributor.nonIdAuthorKim DS-
dc.contributor.nonIdAuthorIm, HB-
dc.type.journalArticleArticle-
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