Spatial Distribution of Thin Oxide Changing in Reactive Ion Etcher and MERIE Etcher
The spatial variation of the oxide charging across a wafer in a magnetically enhanced reactive ion etcher (MERIE) was investigated and compared with that in a reactive ion etcher (RIE). The polarity as well as the magnitude of the oxide charging current were determined by evaluating quasi-static CV curves for MOS capacitors. In a MERIE etcher with a static magnetic field, oxide charging is negative for about half of the wafer and positive for the other half of the wafer. A model is proposed to explain how lateral magnetic field affects the spatial distribution of charging across the wafer in a MERIE etcher.
- Issue Date
- 1993-02
- Language
- English
- Article Type
- Article
- Keywords
PLASMA
- Citation
IEEE ELECTRON DEVICE LETTERS, v.14, no.2, pp.88 - 90
- ISSN
- 0741-3106
- Appears in Collection
- RIMS Journal Papers
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- There are no files associated with this item.
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