Spatial Distribution of Thin Oxide Changing in Reactive Ion Etcher and MERIE Etcher

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dc.contributor.authorH. Shinko
dc.contributor.authorK. Noguchiko
dc.contributor.authorX. Y. Qianko
dc.contributor.authorN. jhako
dc.contributor.authorG. W. Hillsko
dc.contributor.authorC. Huko
dc.date.accessioned2013-02-25T18:18:45Z-
dc.date.available2013-02-25T18:18:45Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1993-02-
dc.identifier.citationIEEE ELECTRON DEVICE LETTERS, v.14, no.2, pp.88 - 90-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10203/64268-
dc.description.abstractThe spatial variation of the oxide charging across a wafer in a magnetically enhanced reactive ion etcher (MERIE) was investigated and compared with that in a reactive ion etcher (RIE). The polarity as well as the magnitude of the oxide charging current were determined by evaluating quasi-static CV curves for MOS capacitors. In a MERIE etcher with a static magnetic field, oxide charging is negative for about half of the wafer and positive for the other half of the wafer. A model is proposed to explain how lateral magnetic field affects the spatial distribution of charging across the wafer in a MERIE etcher.-
dc.languageEnglish-
dc.publisherIEEE-Inst Electrical Electronics Engineers Inc-
dc.subjectPLASMA-
dc.titleSpatial Distribution of Thin Oxide Changing in Reactive Ion Etcher and MERIE Etcher-
dc.typeArticle-
dc.identifier.wosidA1993KJ10600015-
dc.type.rimsART-
dc.citation.volume14-
dc.citation.issue2-
dc.citation.beginningpage88-
dc.citation.endingpage90-
dc.citation.publicationnameIEEE ELECTRON DEVICE LETTERS-
dc.identifier.doi10.1109/55.215117-
dc.contributor.localauthorH. Shin-
dc.contributor.nonIdAuthorK. Noguchi-
dc.contributor.nonIdAuthorX. Y. Qian-
dc.contributor.nonIdAuthorN. jha-
dc.contributor.nonIdAuthorG. W. Hills-
dc.contributor.nonIdAuthorC. Hu-
dc.type.journalArticleArticle-
dc.subject.keywordPlusPLASMA-
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