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NO	Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1	Influence of Si-doping on carrier localization of MOCVD-grown InGaN/GaN multiple quantum wells Cho, Yong-Hoon; Schmidt, TJ; Bidnyk, S; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, v.4, pp.6 - 44, 1999
2	Room temperature laser action in laterally overgrown GaN pyramids on (111) silicon Bidnyk, S; Little, BD; Cho, Yong-Hoon; Krasinski, J; Song, JJ; Yang, W; McPherson, SA, MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, v.4, pp.6 - 48, 1999
3	Laser action in GaN pyramids grown on, (111) silicon by selective lateral overgrowth Bidnyk, S; Little, BD; Cho, Yong-Hoon; Krasinski, J; Song, JJ; Yang, W; McPherson, SA, APPLIED PHYSICS LETTERS, v.73, no.16, pp.2242 - 2244, 1998-10
4	High-temperature stimulated emission in optically pumped InGaN/GaN multiquantum wells Bidnyk, S; Schmidt, TJ; Cho, Yong-Hoon; Gainer, GH; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, APPLIED PHYSICS LETTERS, v.72, no.13, pp.1623 - 1625, 1998-03

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