High-temperature stimulated emission in optically pumped InGaN/GaN multiquantum wells

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Stimulated emission (SE) in optically pumped InGaN/GaN multiquantum well (MQW) structures grown by metalorganic chemical vapor deposition was experimentally studied in the temperature range of 175-575 K. The GaN barriers were intentionally doped with a different Si concentration ranging fr om 1 X 10(17) to 3 X 10(19) cm(-3) and the effects of Si doping of GaN barriers on the optical properties of InGaN/GaN MQWs were investigated. The SE threshold was measured as a function of temperature and compared with bulk GaN. We observed that the SE threshold had a low value and a weak temperature dependence: for example, similar to 25 kW/cm(2) at 175 K, similar to 55 kW/cm(2) at 300 K, and similar to 300 kW/cm(2) at 575 K for one of the samples. Low SE thresholds are attributed to the high-quantum efficiency of the MQWs, possibly associated with the large localization of excitons. The characteristic temperature of 162 K was derived from the temperature dependence of the SE threshold. The integrated emission intensity versus pumping density was examined for different temperatures. This study shows that InGaN/GaN MQWs are suitable for development of laser diodes that can operate well above room temperature. (C) 1998 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
1998-03
Language
English
Article Type
Article
Keywords

QUANTUM-WELLS; GAN; SAPPHIRE; DIODES; LASERS; GROWTH; BLUE

Citation

APPLIED PHYSICS LETTERS, v.72, no.13, pp.1623 - 1625

ISSN
0003-6951
DOI
10.1063/1.121133
URI
http://hdl.handle.net/10203/75974
Appears in Collection
PH-Journal Papers(저널논문)
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