DC Field | Value | Language |
---|---|---|
dc.contributor.author | Bidnyk, S | ko |
dc.contributor.author | Schmidt, TJ | ko |
dc.contributor.author | Cho, Yong-Hoon | ko |
dc.contributor.author | Gainer, GH | ko |
dc.contributor.author | Song, JJ | ko |
dc.contributor.author | Keller, S | ko |
dc.contributor.author | Mishra, UK | ko |
dc.contributor.author | DenBaars, SP | ko |
dc.date.accessioned | 2013-03-02T23:16:18Z | - |
dc.date.available | 2013-03-02T23:16:18Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1998-03 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.72, no.13, pp.1623 - 1625 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/75974 | - |
dc.description.abstract | Stimulated emission (SE) in optically pumped InGaN/GaN multiquantum well (MQW) structures grown by metalorganic chemical vapor deposition was experimentally studied in the temperature range of 175-575 K. The GaN barriers were intentionally doped with a different Si concentration ranging fr om 1 X 10(17) to 3 X 10(19) cm(-3) and the effects of Si doping of GaN barriers on the optical properties of InGaN/GaN MQWs were investigated. The SE threshold was measured as a function of temperature and compared with bulk GaN. We observed that the SE threshold had a low value and a weak temperature dependence: for example, similar to 25 kW/cm(2) at 175 K, similar to 55 kW/cm(2) at 300 K, and similar to 300 kW/cm(2) at 575 K for one of the samples. Low SE thresholds are attributed to the high-quantum efficiency of the MQWs, possibly associated with the large localization of excitons. The characteristic temperature of 162 K was derived from the temperature dependence of the SE threshold. The integrated emission intensity versus pumping density was examined for different temperatures. This study shows that InGaN/GaN MQWs are suitable for development of laser diodes that can operate well above room temperature. (C) 1998 American Institute of Physics. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | QUANTUM-WELLS | - |
dc.subject | GAN | - |
dc.subject | SAPPHIRE | - |
dc.subject | DIODES | - |
dc.subject | LASERS | - |
dc.subject | GROWTH | - |
dc.subject | BLUE | - |
dc.title | High-temperature stimulated emission in optically pumped InGaN/GaN multiquantum wells | - |
dc.type | Article | - |
dc.identifier.wosid | 000072760100034 | - |
dc.identifier.scopusid | 2-s2.0-0001053458 | - |
dc.type.rims | ART | - |
dc.citation.volume | 72 | - |
dc.citation.issue | 13 | - |
dc.citation.beginningpage | 1623 | - |
dc.citation.endingpage | 1625 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.121133 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Cho, Yong-Hoon | - |
dc.contributor.nonIdAuthor | Bidnyk, S | - |
dc.contributor.nonIdAuthor | Schmidt, TJ | - |
dc.contributor.nonIdAuthor | Gainer, GH | - |
dc.contributor.nonIdAuthor | Song, JJ | - |
dc.contributor.nonIdAuthor | Keller, S | - |
dc.contributor.nonIdAuthor | Mishra, UK | - |
dc.contributor.nonIdAuthor | DenBaars, SP | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | QUANTUM-WELLS | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordPlus | SAPPHIRE | - |
dc.subject.keywordPlus | DIODES | - |
dc.subject.keywordPlus | LASERS | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | BLUE | - |
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