High-temperature stimulated emission in optically pumped InGaN/GaN multiquantum wells

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dc.contributor.authorBidnyk, Sko
dc.contributor.authorSchmidt, TJko
dc.contributor.authorCho, Yong-Hoonko
dc.contributor.authorGainer, GHko
dc.contributor.authorSong, JJko
dc.contributor.authorKeller, Sko
dc.contributor.authorMishra, UKko
dc.contributor.authorDenBaars, SPko
dc.date.accessioned2013-03-02T23:16:18Z-
dc.date.available2013-03-02T23:16:18Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1998-03-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.72, no.13, pp.1623 - 1625-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/75974-
dc.description.abstractStimulated emission (SE) in optically pumped InGaN/GaN multiquantum well (MQW) structures grown by metalorganic chemical vapor deposition was experimentally studied in the temperature range of 175-575 K. The GaN barriers were intentionally doped with a different Si concentration ranging fr om 1 X 10(17) to 3 X 10(19) cm(-3) and the effects of Si doping of GaN barriers on the optical properties of InGaN/GaN MQWs were investigated. The SE threshold was measured as a function of temperature and compared with bulk GaN. We observed that the SE threshold had a low value and a weak temperature dependence: for example, similar to 25 kW/cm(2) at 175 K, similar to 55 kW/cm(2) at 300 K, and similar to 300 kW/cm(2) at 575 K for one of the samples. Low SE thresholds are attributed to the high-quantum efficiency of the MQWs, possibly associated with the large localization of excitons. The characteristic temperature of 162 K was derived from the temperature dependence of the SE threshold. The integrated emission intensity versus pumping density was examined for different temperatures. This study shows that InGaN/GaN MQWs are suitable for development of laser diodes that can operate well above room temperature. (C) 1998 American Institute of Physics.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectQUANTUM-WELLS-
dc.subjectGAN-
dc.subjectSAPPHIRE-
dc.subjectDIODES-
dc.subjectLASERS-
dc.subjectGROWTH-
dc.subjectBLUE-
dc.titleHigh-temperature stimulated emission in optically pumped InGaN/GaN multiquantum wells-
dc.typeArticle-
dc.identifier.wosid000072760100034-
dc.identifier.scopusid2-s2.0-0001053458-
dc.type.rimsART-
dc.citation.volume72-
dc.citation.issue13-
dc.citation.beginningpage1623-
dc.citation.endingpage1625-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.121133-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorCho, Yong-Hoon-
dc.contributor.nonIdAuthorBidnyk, S-
dc.contributor.nonIdAuthorSchmidt, TJ-
dc.contributor.nonIdAuthorGainer, GH-
dc.contributor.nonIdAuthorSong, JJ-
dc.contributor.nonIdAuthorKeller, S-
dc.contributor.nonIdAuthorMishra, UK-
dc.contributor.nonIdAuthorDenBaars, SP-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusQUANTUM-WELLS-
dc.subject.keywordPlusGAN-
dc.subject.keywordPlusSAPPHIRE-
dc.subject.keywordPlusDIODES-
dc.subject.keywordPlusLASERS-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusBLUE-
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