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Results 1-10 of 13 (Search time: 0.008 seconds).
| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Origin of device instability in amorphous indium-gallium-zinc oxide thin film transistors Noh, H.-K.; Ryu, B.; Choi, E.-A.; Chang, Kee-Joo, 2011 Materials Research Society (MRS) Spring Meeting, Materials Research Society , 2011-04 | |
| The role of O-vacancy in Negative Bias Illumination Stress Instability in amoprhous In-Ga-Zn-O TFTs Ryu, B.; Noh, H.-K.; Choi, E.-A.; Chang, Kee-Joo, 한국물리학회 가을 학술논문발표회, 한국물리학회, 2010-10 | |
| First-principles study on boron segregation at Si/SiO2 interface Oh, Y. J.; Hwang, J.-H.; Noh, H.-K.; Bang, J.; Ryu, B.; Chang, Kee-Joo, 한국물리학회 가을학술논문발표회, 한국물리학회, 2010-10 | |
| The electronic structure of oxygen vacancy in amorphous HfSiO_4 Noh, H.-K.; Ryu, B.; Bang, J.; Chang, Kee-Joo; Choi, E.-A., 30th International Conference on the Physics of Semiconductors, 2010-07 | |
| Segregation of B dopants in Si/SiO2 interface Oh, Y. J.; Hwang, J.-H.; Noh, H.-K.; Bang, J.; Ryu, B.; Chang, Kee-Joo, The 6th KIAS Electronic Structure Calculation Workshop, KIAS, 2010-06 | |
| Electronic Structure and Defects in Oxide Semiconductors and Insulators Ryu, B.; Choi, E.-A.; Noh, H.-K.; Bang, J.; Lee, W.-J.; Chang, Kee-Joo, International Conference on Core Research and Engineering Science of Advanced Materials, 2010 | |
| O-vacancy in amorphous indium-gallium-zinc oxide thin film transistors: origin of negative bias illumination stress instability Noh, H.-K.; Ryu, B.; Choi, E.-A.; Chang, Kee-Joo, 한국반도체학술대회, 한국반도체학회, 2011-02 | |
| Electronic structure and defects in high-k dielectrics and oxide semiconductors Ryu, B.; Noh, H.-K.; Bang, J.; Choi, E.-A.; Lee, W.-J.; Chang, Kee-Joo, International Union of Materials Research Societies - International Conference on Electronic Materials 2010, 2010-08 | |
| Role of O-vacancy defects in devices based on high-k dielectrics and amorphous oxide semiconductors Chang, Kee-Joo; Ryu, B.; Noh, H.-K.; Choi, E.-A., 3rd ACCMS Working Group Meeting on Advances in Nano-device Simulation, ACCMS, 2011-03 | |
| Stability and segregation of boron dopants at the Si/SiO2 interface Oh, Y. J.; Hwang, J.-H.; Noh, H.-K.; Bang, J.; Ryu, B.; Chang, Kee-Joo, 2011 Materials Research Society (MRS) Spring Meeting, Materials Research Society, 2011-04 |
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